Article reSeArcH
00.500 .5
D (input node) (Volts)extract voltage transfer
curve (VTC) parameters(a)
static noise margin (SNM) (% of VDD)minimumSNM
(limits pNMS)0% 25%101105103occurrences
(# of logic stages)parametervalue
technology node
contacted gate pitch54 nm
gate,contact length 9nm, 9 nm
contact resistance 3
equivalent oxide
thickness (EOT)0.7 nmCNT pitch, diameter 2 nm, 1.7 nm
m-CNT resistance 40 k
IOFFtarget 100 nA/μmlayers
gate
source/drain
local interconnect
active regiontechpreferred
cornerpNMS pS:
99.999%
99.99%
99.9%minimum SNM (% of VDD)0 0.2 0.40%99.9%99%90%(j)
00.10.20.30.40.5012VOHVIHVIL
VOL
extracted dataaffine modelaffine model form:(k)
EDP-
optimal
design
0.010.0428energy/cycle(nJ)Pareto-
optimal curveclock frequency (GHz)parasitic extractionlogic synthesis,
clock tree synthesis,
placement & routing,
parasitic extraction
(sweep over multiple
circuit parameters)EDP optimizationenergy/
cyclephysical designsextracted netlists
library characterizationmaterial propertieslibrary cell layoutscompact model0300 .4experimental
datacompact
model:
VGS VT
= 0.25 V-VDS(V)ID)TNC / Aμ(library power/timingclock
frequencyinputs design flow100interconnect
target clock frequencyselect the EDP-
optimal design over
multiple individual
physical designsEDP optimizationFET/circuit parametersprocessor
core:
single
physical
designCNFET active
regions aligneds-CNTs
m-CNTsnand2 nor 2 (b) D flip-flop
MSclknclkbSSSH
MHD(c) QN(d)
MH(internal node)(Volts)(VIH, VOL)(VIL, VOH)(e)
# m-CNTs in
pull-down networkvoltage(Volts)(f)
where:r = number of
sampling regions
Mi= number of m-CNTs
in sampling region i(g)
(h)
(i)
standard
cells:
row 1standard
cells:
row 2region with
aligned CNTsVariable
number of s-CNTsVariable
number of m-CNTsregiregion on (^12)
region 3
regiregion on (^45)
region 6
regiregion on (^78)
region 9
regiregion 10on 11
region 12
S1S2
S3
S4S5
S6
S7S8
S9
S10S11
S12
M1M2
M3
M4M5
M6
M7M8
M9
M1M1 (^01)
M1 2
U3 U4 U5
U6
P3,1
N3
,1
P5,1
N5
,1
N6
,1
P6,1
P4,1
N4
,1
P4,2
N4
,2
CLK
Extended Data Fig. 9 | See next page for caption.