Nature - USA (2020-01-16)

Extended Data Fig. 8 | Backgate-induced nonlinearity and evolved logic
gates at room temperature. a, A positive voltage VSub with respect to the drain
voltage is applied to the n-type substrate (Fig. 2b) to make the depletion region
wider at the p–n junction, and to suppress the band conduction. b, Evolved
gates at room temperature. Red circles are experimental outputs, and black
lines represent the normalized desired outputs. The output current levels, and
also the separation between these levels, are more than one order of magnitude
larger than those of the logic gates evolved at 77 K, owing to the increased
hopping conductance (Supplementary Note 3). The increased noise intensity is
mainly due to the settings of the current measurement circuit (Methods).