Article
Extended Data Fig. 8 | Time sequence of MOKE images of the NAND gate
during operation and corresponding schematics. The NAND gate contains
two inverters in each of the DW reservoirs and a bias set to ‘0’. The boundaries
of the NAND gate are indicated by red dashed lines. The two V-shaped inverters
in the DW reservoirs are associated with small reversed domains in the initial
state (purple triangles) resulting from the chiral coupling. A sequence of MOKE
images is captured and each image is taken following two current pulses with a
current density of 7.5 × 10^11 A m−2 and a pulse length of 30 ns. The bright and
dark regions in the gate structure in the MOKE images correspond to ⊙ and ⊗
magnetization, respectively. In the schematics, green and purple correspond
to ⊙ and ⊗ magnetization, respectively. The two DW reservoirs and the bias are
set to logical value ‘0’ by applying an OOP magnetic field of 1 kOe. All the scale
bars are 1 μm.