Article
Extended Data Fig. 10 | Hall measurement of logic operation in a NAND gate.
a, Schematic and optical microscope image of the device. Red, yellow and
purple colours in the image represent the regions with electrodes, the Pt cross
and the NAND gate, respectively. b, Hall resistance as a function of pulse
number and corresponding MOKE images. Left, typical evolution of the Hall
resistance with increasing number of pulses. Right, the first 30 and last 30 of
the 1,172 repeated measurements. The Hall resistance levels for ⊙ and ⊗ output
magnetizations are indicated by the red dashed lines. An OOP magnetic field is
applied to set the initial state at the beginning of each measurement, indicated
with the red arrow. The bright and dark regions in the gate structure in the
MOKE images correspond to ⊙ and ⊗ magnetization, respectively. The
boundaries of the NAND gate are indicated by red dashed lines. The current
density and pulse length of the applied current pulses are 7.5 × 10^11 A m−2 and
30 ns, respectively. c, Operational reliability as a function of the number of
current pulses. All the scale bars are 2 μm.