Department of Computer Scien

ce and Information Engineering

National Cheng Kung University

HANEL

SEMI-

CONDUCTOR MEMORY

RAM

Packing Issue in

DRAM(cont’)

‰Internally, the DRAM structure is divided into a square of rows and columns‰The first half of the address is called the row and the second half is called column

¾The first half of the address is sent in through the address pins, and by activating RAS (row address strobe), the internal latches inside DRAM grab the first half of the address¾After that, the second half of the address is sent in through the same pins, and by activating CAS (column address strobe), the internal latches inside DRAM latch the second half of the address