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SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

(Greg DeLong) #1

  • 1 Structural Properties of Semiconductors Introduction xx

    • 1.1 INTRODUCTION

    • 1.2 CRYSTALSTRUCTURE

      • 1.2.1 Basic Lattice Types

      • 1.2.2 BasicCrystalStructures

      • 1.2.3 Notation to Denote Planes and Points in a Lattice: Miller Indices

      • 1.2.4 Artificial Structures: Superlattices and Quantum Wells

      • 1.2.5 Surfaces : Ideal Versus Real

      • 1.2.6 Interfaces

      • 1.2.7 Semiconductor Defects



    • 1.3 LATTICEMISMATCHEDSTRUCTURES

    • 1.4 STRAINEDEPITAXY:STRAINTENSOR

    • 1.5 TECHNOLOGY CHALLENGES

    • 1.6 PROBLEMS

    • 1.7 FURTHERREADING



  • 2 Electronic levels in semiconductors

    • 2.1 INTRODUCTION

      • BOUND STATES.................................. 2.2 PARTICLES IN AN ATTRACTIVE POTENTIAL:

      • 2.2.1 Electronic levels in a hydrogen atom

      • 2.2.2 Electrons in a quantum well



    • 2.3 ELECTRONS IN CRYSTALLINE SOLIDS

      • 2.3.1 Particle in a periodic potential: Bloch theorem

      • DISTRIBUTIONFUNCTION 2.4 OCCUPATION OF STATES:



    • 2.5 METALSANDINSULATORS........................... CONTENTS vii

      • 2.5.1 ElectronsandHoles

      • SEMICONDUCTORS 2.6 BANDSTRUCTURE OF SOME IMPORTANT

      • 2.6.1 Direct and indirect semiconductors



    • 2.7 MOBILECARRIERS

      • 2.7.1 Mobileelectronsinmetals

      • 2.7.2 Electrons and holes in semiconductors



    • 2.8 DOPING OF SEMICONDUCTORS

    • 2.9 DOPING IN POLAR MATERIALS

    • 2.10 TAILORING ELECTRONIC PROPERTIES....................

      • 2.10.1 Electronic properties of alloys

      • 2.10.2 Electronic properties of quantum wells



    • 2.11 STRAINED HETEROSTRUCTURES

    • 2.12DEFECTSTATESINSOLIDS...........................

    • 2.13 TECHNOLOGY ISSUES..............................

    • 2.14 PROBLEMS

    • 2.15FURTHERREADING



  • 3 Charge transport in materials

    • 3.1 INTRODUCTION

    • 3.2 CHARGETRANSPORT:ANOVERVIEW

    • 3.3 TRANSPORT AND SCATTERING

      • 3.3.1 Quantum Mechanics and Scattering of electrons



    • 3.4 TRANSPORT UNDER AN ELECTRIC FIELD .................

      • 3.4.1 Velocity–electric field relations in semiconductors ............



    • 3.5 SOMEIMPORTANTISSUESINTRANSPORT .................

    • 3.6 CARRIERTRANSPORTBYDIFFUSION ....................

      • 3.6.1 Driftanddiffusiontransport:Einstein’srelation..............



    • 3.7 CHARGE INJECTION AND QUASI-FERMI LEVELS ............

      • 3.7.1 Non-equilibrium Distributions ......................



    • 3.8 CARRIER GENERATION AND RECOMBINATION ............

      • 3.8.1 Optical Absorption and Emission in Semiconductors ...........

      • 3.8.2 Schockley Read Hall Statistics ......................

      • of electrons and holes separately).......................... 3.9 CURRENT CONTINUITY(The law of conservation



    • 3.10 PROBLEMS ....................................

    • 3.11FURTHERREADING ...............................



  • 4 Junctions in Semiconductors:P-NDiodes

    • 4.1 Introduction ....................................

    • 4.2 P-NJUNCTIONINEQUILIBRIUM .......................

    • 4.3 P-NDIODE UNDER BIAS ...........................

      • 4.3.1 DriftandDiffusionCurrentsintheBiasedDiode .............

      • 4.3.2 Minority and Majority Currents in thep-nDiode ............. CONTENTS viii

      • 4.3.3 NarrowDiodeCurrent ...........................

      • ATION ....................................... 4.4 REAL DIODES: CONSEQUENCES OF DEFECTS AND CARRIER GENER-

      • 4.4.1 Generation-Recombination Currents .................



    • 4.5 ReverseBiasCharacteristics ............................

      • 4.5.1 FirstObservation..............................

      • 4.5.2 QuasiFermiLevels.............................



    • 4.6 HIGH-VOLTAGE EFFECTS IN DIODES.....................

      • 4.6.1 ForwardBias:HighInjectionRegion ...................

      • 4.6.2 Reverse Bias: Impact Ionization ......................



    • 4.7 Avalanche Breakdown in ap-njunction ......................

      • 4.7.1 Reverse Bias: Zener Breakdown ......................



    • 4.8 DIODEAPPLICATIONS:ANOVERVIEW....................

      • 4.8.1 Applications of p-n diodes .........................

      • 4.8.2 The Solar Cell and Photodetector .....................

      • 4.8.3 The uses of diode non-linearity (Mixers, Multipliers, Power Detectors)

      • 4.8.4 PowerDevices ...............................



    • 4.9 Light emitting diode (LED) ...........................

      • 4.9.1 EmissionEnergy ..............................

      • 4.9.2 Carrier Injection and Spontaneous Emission................



    • 4.10 PROBLEMS ....................................

    • 4.11 DESIGN PROBLEMS ...............................

    • 4.12FURTHERREADING ...............................



  • 5 Semiconductor Junctions

    • 5.1 INTRODUCTION .................................

    • 5.2 METAL INTERCONNECTS ...........................

      • SCHOTTKYBARRIER .............................. 5.3 METAL SEMICONDUCTOR JUNCTION:

      • 5.3.1 Schottky Barrier Height ..........................

      • 5.3.2 Capacitance Voltage Characteristics....................

      • 5.3.3 Current Flow across a Schottky Barrier: Thermionic Emission ......

      • 5.3.4 Comparison of Schottky andp-ndiodes .................

      • FOROHMICCONTACTS............................. 5.4 METAL SEMICONDUCTOR JUNCTIONS



    • 5.5 INSULATOR-SEMICONDUCTOR JUNCTIONS .................

      • 5.5.1 Insulator-Silicon ..............................



    • 5.6 SEMICONDUCTOR HETEROJUNCTIONS .................

      • 5.6.1 Abruptp-nheterojunction .........................

      • 5.6.2 Gradedp-nheterojunction .........................

      • 5.6.3 Quasi-electricfields ............................



    • 5.7 PROBLEMS ....................................

    • 5.8 FURTHERREADING ............................... CONTENTS ix



  • 6 Bipolar Junction Transistors

    • 6.1 INTRODUCTION .................................

    • 6.2 BIPOLARTRANSISTOR:ACONCEPTUALPICTURE.............

      • RELATION .................................... 6.3 STATIC CHARACTERISTICS: CURRENT-VOLTAGE

      • 6.3.1 CurrentFlowinaBJT ...........................

      • 6.3.2 BJTBiasingincircuits...........................

      • 6.3.3 Current-Voltage: The Ebers-Moll Model .................



    • 6.4 DEVICE DESIGN AND DEVICE PERFORMANCE PARAMETERS......

      • TAILORINGANDHBTs.............................. 6.5 BJT DESIGN LIMITATIONS: NEED FOR BAND

      • 6.5.1 The Generalized Moll-Ross Relationship .................

      • 6.5.2 How muchβdo we need? .........................



    • 6.6 SECONDARY EFFECTS IN REAL DEVICES .................

      • 6.6.1 HighInjection:TheKirkEffect ......................

      • 6.6.2 HighInjection:ThermalEffects ......................

      • 6.6.3 Base Width Modulation: The Early Effect ................

      • 6.6.4 Drift Effects in the Base: Nonuniform Doping...............

      • 6.6.5 Avalanche Breakdown ...........................

      • 6.6.6 LowInjectionEffectsandCurrentGain ..................

      • 6.6.7 CurrentCrowdingEffect..........................



    • 6.7 PROBLEMS ....................................

    • 6.8 DESIGN PROBLEMS ...............................

    • 6.9 FURTHERREADING ...............................



  • 7 Temporal Response Of Diodes and Bipolar Transistors

    • 7.1 INTRODUCTION .................................

    • 7.2 MODULATION AND SWITCHING OF AP-NDIODE: AC RESPONSE

      • 7.2.1 Small-Signal Equivalent Circuit of ap-nDiode..............

      • 7.2.2 Switching characteristics of diodes.....................



    • 7.3 Temporal Response of a Schottky Diode ......................

      • ACHARGE-CONTROLANALYSIS ....................... 7.4 BIPOLAR JUNCTION TRANSISTORS:

      • 7.4.1 Junction Voltages at Saturation ......................



    • 7.5 HIGH-FREQUENCYBEHAVIOROFABJT...................

      • 7.5.1 Bipolar Transistor Small-Signal Equivalent Circuit ............

      • 7.5.2 Attenuation and Phase Shift of a Traveling Electron Wave .......

      • 7.5.3 Small Signal Figures of Merit ......................

      • ROADMAP..................................... 7.6 BIPOLAR TRANSISTORS: A TECHNOLOGY

      • 7.6.1 Si Bipolar Technology ...........................

      • 7.6.2 Si-BasedHBTs...............................

      • 7.6.3 GaAs/AlGaAsHBTs............................ CONTENTS x

      • 7.6.4 InGaAs/InAlAsandInGaAs/InPHBTs ..................



    • 7.7 PROBLEMS ....................................

    • 7.8 DESIGN PROBLEMS ...............................



  • 8 Field Effect Transistors

    • 8.1 INTRODUCTION .................................

    • 8.2 JFETANDMESFET:CHARGECONTROL ...................

    • 8.3 CURRENT-VOLTAGE CHARACTERISTICS .................

      • 8.3.1 TheOhmicRegime.............................

      • 8.3.2 A Nearly Universal Model for FET Behavior : The Saturation Regime



    • 8.4 HFETs:INTRODUCTION.............................

    • 8.5 CHARGECONTROLMODELFORTHEMODFET ..............

      • 8.5.1 Modulation Efficiency ...........................



    • 8.6 POLAR MATERIALS AND STRUCTURES .................

      • 8.6.1 PolarMaterials ...............................

      • 8.6.2 PolarHFETStructures ...........................



    • 8.7 DESIGNISSUESINHFETS............................

      • 8.7.1 n+Cap Layers ...............................

      • 8.7.2 Maximizing 2DEG Conductivity ......................

      • 8.7.3 Back-barriers to Substrate Injection ....................

      • 8.7.4 Gate Recess Design ...........................

      • 8.7.5 FieldPlates.................................

        • AlInAs/GaInAsandAlGaN/GaN ..................... 8.7.6 Comparison of two disparate material systems:



      • 8.7.7 Non-idealities in state-of-the-art transistors ................



    • 8.8 SMALLANDLARGESIGNALISSUESANDFIGURESOFMERIT .....

      • 8.8.1 Small-Signal Characteristics ......................

      • 8.8.2 Power-frequency limit ...........................

        • characteristics ............................... 8.8.3 Classes of operation of transistor power amplifiers and necessary device





    • 8.9 Implications on device technology and circuits .................

    • 8.10 PROBLEMS ....................................

    • 8.11 DESIGN PROBLEMS ...............................

    • 8.12FURTHERREADING ...............................



  • 9 Field Effect Transistors: MOSFET

    • 9.1 INTRODUCTION .................................

    • 9.2 MOSFET:DEVICESANDIMPACT .......................

    • 9.3 METAL-OXIDE-SEMICONDUCTOR CAPACITOR...............

      • OFTHEMOSSTRUCTURE............................ 9.4 CAPACITANCE-VOLTAGE CHARACTERISTICS



    • 9.5 MOSFETOPERATION ..............................

      • 9.5.1 Current-VoltageCharacteristics ......................

      • 9.5.2 Substrate Bias Effects ........................... CONTENTS xi

      • 9.5.3 Depletion and Enhancement MOSFETs .................

      • 9.5.4 ComplementaryMOSFETs ........................



    • 9.6 IMPORTANT ISSUES AND FUTURE CHALLENGES IN REAL MOSFETS

      • 9.6.1 Subthreshold Conduction..........................

      • 9.6.2 Mobility Variation with Gate Bias .....................

      • 9.6.3 Important Effects in Short-Channel MOSFETs ............

      • 9.6.4 Parasitic Bipolar Transistors and Latch-up in CMOS ...........



    • 9.7 SUMMARY.....................................

    • 9.8 PROBLEMS ....................................

    • 9.9 DESIGN PROBLEMS ...............................

    • 9.10FURTHERREADING ...............................



  • 10 Coherent Transport and Mesoscopic Devices

    • 10.1INTRODUCTION .................................

    • 10.2 ZENER-BLOCHOSCILLATIONS ........................

    • 10.3RESONANTTUNNELING ............................

    • 10.4 QUANTUM INTERFERENCE EFFECTS ....................

    • 10.5 MESOSCOPICSTRUCTURES..........................

      • 10.5.1 Conductance Fluctuations and Coherent Transport ............

      • 10.5.2 Coulomb Blockade Effects ......................

      • ANDSPINTRONICS................................ 10.6 MAGNETIC SEMICONDUCTORS



    • 10.7 PROBLEMS ....................................

    • 10.8 Further Reading...................................



  • A List of Symbols

  • B Boltzmann Transport Theory

    • B.1 BOLTZMANNTRANSPORTEQUATION ....................

      • B.1.1 Diffusion-Induced Evolution offk(r) ...................

      • B.1.2 External Field-Induced Evolution offk(r) ................

      • B.1.3 Scattering-Induced Evolution offk(r)...................



    • B.2 AVERAGINGPROCEDURES...........................



  • C Density of States

  • D Important Properties of Semiconductors

  • E Beyond the Depletion Approximation

  • F Design of Graded Heterojunctions for Bipolar Transistors

  • Index

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