ACKNOWLEDGEMENTS
Writing a book on Semiconductor Device Physics and Design is never complete and proba-
bly never completely satisfying. The field is vast and diverse and it is difficult to decide what
should be included in the book and what should not be. Of course it is always a good idea for
authors to not discuss areas that they are unfamiliar with and that helped narrow the scope of
this book down greatly!! In all seriousness the flow and content of this book is a consequence
of the classes that we have taught at UC Santa Barbara and The University of Michigan and
reflects what we believe can be taught in a manner that emphasizes physical understanding with
an appropriate amount of rigor. At UCSB Prof Kroemer had developed a two-quarter sequence
class on device physics which I (Umesh Mishra) took over when I arrived at UCSB in 1990.
I developed the class over the past 15 years using his notes as a foundation and the new con-
tent is reflected in this book. I am grateful to Prof Kroemer for allowing me to include parts
of his notes and homework problems in this book. Prof Mark Rodwell contributed to under-
standing that the answer to the question “How muchβdo we need” is application dependent.
Prof Steve Long and Prof Rakesh Lal helped with the diode- applications section. Prof Tomas
Palacios of MIT contributed to the AlGaN/GaN HEMT description. Dr Karthik Krishnamurthy
(RFMD) allowed use of his descriptions of classes of FET amplifiers. Lastly, Dr Jeff Shealy (VP
RFMD) and Dr Rama Vetury (RFMD) are thanked for their help in illustrating how the mobile
phone uses multiple semiconductor technologies for optimal system performance as described
in the introduction. Discussions with Profs. Lorenzo Faraone, Brett Nener and John Dell at The
University of Western Australia were helpful (and fun). Drs., Lee McCarthy, Ilan Ben-Yaacov,
Nicholas Fichtenbaum and Siddharth Rajan contributed significantly in helping the text layout
of the book. We thank several of our colleagues who contributed figures to the book and they
have been acknowledged at the appropriate places. Umesh would like to thank his wife Susan
for not asking the question “Isn’t it finished?” too many times. Jasprit would like to thank his
wife Teresa for drawing numerous figures and YuhRennn Wu for providing device design studies
for field effect transistors. We would also like to thank the editors at Springer Verlag for their
enthusiasm and support.
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