3.11. FURTHER READING 145
whereτis the carrier lifetime. Calculate the following:
- What fraction of the donors is ionized?
- What is the diffusion length of holes in this material?
Use the following data:
μn= 1100 cm^2 /V·s:μp= 400 cm^2 /V·s
Problem 3.20Calculate the area density of surface states that would lead tosurface
generationrate of a fully depleted surface to equaltwice the generation rate in the surface
depletion region.Consider the states to be characterized by a capture cross-section of
10 −^15 cm^2 and the thermal velocity to be 107 cms. Assume the surface depletion region to
be 1 μmwide and the time constantτ 0 =1μs.
3.11FURTHERREADING ...............................
- Transport in crystalline materials
- M. Lundstrom,FundamentalsofCarrierTransport (Modular Series on Solid State
Devices), eds. by G.W, Neudeck and R.F. Pierret, Addison-Wesley, Reading, MA,
vol. X (1990).
- J. Singh,ModernPhysicsforEngineers, Wiley-Interscience, New York (1999).
- K. Seeger,SemiconductorPhysics, Springer Verlag, New York (1985).
- J. Singh,ElectronicandOptoelectronicPropertiesofSemiconductors, Cambridge
University Press (2003).
- Transport in disordered materials
- N.F. Mott and E.A. Davis,ElectronicProcessesinNon-CrystallineMaterials, Claren-
den Press, Oxford (1971).
- A.J. Moulson and J.M. Herbert, Electroceramics: Materials, Properties, and
Applications, Chapman & Hall (1992).
