SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

Lecture Plan for a two-quarter sequence of 10 weeks each with 3.5 hours of lecture per week
The basis of this lecture plan is the experience gained from teaching graduate students at
UCSB. The experience has been that the class size is larger in the first quarter than in the second
where a large group of graduate students from many disciplines attend the class to understand
important devices at a level higher than their exposure as undergraduates. It is therefore proposed
that the first quarter cover p-n junctions, heterojunctions, HBTs, FETs and MOSFETs operating
under DC conditions. Here drift diffusion analysis and thermionic emission will be employed to
describe current flow. In the next quarter, it is suggested that the Boltzmann transport analysis
contained in the Appendix be covered and the basis for the drift-diffusion fomalism explained.
Next the methodology for deriving the high frequency properties of devices such as HBTs and
FETs along with their equivalent circuits is covered. Lastly, High Electron Mobility Transistors
and Gallium Nitride based devices may be covered

Quarter 1

Lecture 1: Shockley-Read-Hall analysis of lifetime (this introduces the concept of lifetime es-

sential for p-n junction analysis)

Lecture 2: P-n junction electrostatics, P-n junction transport (Forward)

Lecture 3: P-n junction transport (Reverse) and Applications

Lecture 4: Schottky barrier electrostatics and current transport

Lecture 5: Graded materials, Quasi-fields and heterojuncions

Lecture 6: HBTs, Generalized Moll-Ross relationship Early effect, Kirk effect(quick descrip-

tion)

Lecture 7: FETs and gradual channel analysis

Lecture 8: High Aspect Ratio design analysis

Lecture 9: MOS Capacitor and MOSFETs

Lecture 10: Non-ideal effects

Quarter 2

Lecture 1 and 2: Boltzmann Transport Equation and consequences (Drift Diffusion Equation

derivation, relaxation times)

Lecutre 3: Charge Control Model (Description and application to HBTs)

Lecutre 4: Ramo-Shockley Theorem and the Kirk effect

Lecutre 5: High Frequency properties of HBTs

Lecutre 6: Equivalenbt Circuit derivation of HBTs; Figures of Merit

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