SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

186 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES

p n

-wp 0 wn

n pn^0

p 0

-Wp 0 Wn

x

Ln Lp

Δpn

Δnp

(a)

(b)

V

J

GL=0

increasing GL

(c)

Figure 4.25: (a) Schematic diagram of a reverse-biasedp-njunction illuminated with light. (b)
Minority carrier profile in the structure. (c) Reverse bias current increases as the light intensity
is increased.