SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

4.12. FURTHER READING 215

• R. S. Muller and T. I. Kamins,DeviceElectronicsforIntegratedCircuits (John Wiley
  and Sons, New York, 1986).


• Diode Breakdown


• M. H. Lee and S. M. Sze, “Orientation Dependence of Breakdown Voltage in GaAs,”
  SolidStateElectronics 23 , 1007 (1980).


• S. M. Sze,PhysicsofSemiconductorDevices (John Wiley and Sons, New York,
  1981).


• S. M. Sze and G. Gibbons,AppliedPhysicsLetters 8 , 112 (1986).


• Temporal Response of Diodes


• R. H. Kingston, “Switching Time in Junction Diodes and Junction Transistors,”Proc.
  IRE 42 , 829 (1954).


• M. S. Tyagi,IntroductiontoSemiconductorMaterialsandDevices (John Wiley and
  Sons, New York, 1991).


• D. A. Neamen,SemiconductorPhysicsandDevices:BasicPrinciples (Irwin, Home-
  wood, IL, 1992).