SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

6.6. SECONDARY EFFECTS IN REAL DEVICES 279

JC > JKirk

JC = JKirk

wB

(a)

EC

EF, n

EV

EF, p

(c)

eVBC

ΔwB

eNd,C

-enp,C

injected charge

in collector

Q

(b)

holes

from base

|E|

Figure 6.20: (a) Electric field profile, (b) charge profile, and (c) band diagram in the collector
region whenJC>JKirk.