SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

9.6. IMPORTANT ISSUES IN REAL MOSFETS 479

0

0.0002

0.0004

0.0006

0.0008

0.001

0.0012

0.0014

0.0016

0.0018

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Vd (V)

Id (A/μm)

(a)

(b)

Figure 9.30: (a) TEM of MOSFET structure employing a high-K gate dielectric and a strained
SiGe channel. (b) DeviceI-Vcharacteristics. Figures courtesy of R. Chau, Intel corp.