SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

(Greg DeLong) #1
10.3. RESONANT TUNNELING 495

ψ = A 2 eik z^2 + B 2 e–ik z ψ = A 3 eik z^3 + B 3 e–ik z 3


ψ = A 1 eik z 1


+B 1 e–ik z^1


z 1 z 2 z 3 z 4


W

2

Tunneling has
resonances

Figure 10.5: Typical resonant tunneling structure with two barriers. The wavefunction in each
region has a general form shown. By matching the wavefunctions and their derivatives at the
boundaries one can obtain tunneling probabilities.


A simple application of this formalism is the tunneling of electrons through a single barrier of
heightV 0 and widtha. The tunneling probability is given by


T 1 B(E)=

∣∣



A 3

A 1

∣∣



2

=

4 E(V 0 −E)

V 02 sinh^2 (γa)+4E(V 0 −E)

(10.3.1)

with


γ=

1




2 m(V 0 −E) (10.3.2)

If we have two barriers as shown in figure 10.4, the tunneling through the double barrier is
given by


T 2 B=

[

1+

4 R 1 B

T 12 B

sin^2 (k 1 W−θ)

]− 1

(10.3.3)

whereR 1 Bis the reflection probability from a single barrier


R 1 B=

V 02 sinh^2 γa
V 02 sinh^2 γa+4E(V 0 −E)

(10.3.4)

andθis given by


tanθ=

2 k 1 γcoshγa
(k 12 −γ^2 )sinhγa

(10.3.5)
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