SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

(Greg DeLong) #1
10.5. MESOSCOPIC STRUCTURES 503

systems, electron charging energy effects arising from Coulomb interactions between electrons
can become significant. This phenomenon is called the Coulomb blockade effect. We are fa-
miliar with the parallel plate capacitor with capacitanceCand the relation between a charge
incrementΔQand the potential variationΔV


C=

ΔQ

ΔV

orΔV=

ΔQ

C

(10.5.9)

The capacitance is given by the spacing of the plates(d)and the area(A)


C=

A

d

(10.5.10)

Now consider a case where the capacitance decreases until a single electron on the capacitor
causes a significant change in the voltage. The charging energy to place a single electron on a
capacitor is


ΔE=

e^2
2 C

(10.5.11)

and the voltage needed is
e
2 C


=

80 mV
C(aF)

(10.5.12)

where the capacitance is in units of 10 −^18 F(aF). If we write the charging energy as a thermal
energy,kBT 0 , the temperature associated with the charging energy is


T 0 =

e^2
2 kBC

=

928. 5 K

C(aF)

(10.5.13)

Coulomb blockade effects will manifest themselves if the sample temperatureTis smaller than
this effective charging temperatureT 0 and we expect the following to occur:



  • When the capacitance reaches values approaching∼ 10 −^18 F, each electron causes a shift in
    voltage of several 10s of millivolts.

  • The charging energy of the capacitor, i.e., the energy needed to place a single extra electron
    becomes comparable to or larger thankBTwithTreaching 10 K or even 100 K if the capacitance
    becomes comparable to 10 −^18 F.
    To get the small capacitors needed to generate Coulomb blockade effects at reasonable tem-
    peratures one has to use areal dimensions of<∼ 1000 A ̊× 1000 A with spacing between the ̊
    contacts reaching∼50–100A. With such dimensions (using a relative dielectric constant of ̊ ∼



  1. we get capacitors with capacitances of the order of∼ 10 −^16 F. The charging voltages are
    then∼1mVandT 0 ∼10 K. If the area of the capacitor is reduced further these values increase.
    It is possible to fabricate small capacitors with capacitance approaching 10 −^18 F.
    In figure 10.12 we show the band profile of a typical tunnel junction capacitor which consists
    of two metal contacts separated by a thin tunneling barrier. In the absence of any Coulomb
    blockade we observe a monotonic increase in current with applied bias as shown in figure 10.12a.
    In case the Coulomb blockade is significant we get a very different device behavior. In fig-
    ure 10.12b we show the behavior for a structures where the charging energy is large enough to

Free download pdf