SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS 543

M ate rial B andga p B reak do wn el ec tr i c

(eV ) field (V/cm)

G aA s 1.43 4 x 10^5

G e 0.664 105

InP 1.34

S i 1.1 3 x 10^5

In0.53Ga0.47A s 0.8 2 x 10^5

C5.510^7

S iC 2.9 2-3 x 10^6

SiO 2 9–10^7

Si 3 N 4 5–10^7

GaN 3.4 2 x 10^6

Table D.6: Breakdown electric fields in some semiconductors.