Index
2-dimensional gate FET (TEGFET), 375
2DEG, 68, 376, 377, 381, 382
Conductivity, 396
Polar heterostructures, 394
Sheet charge density, 395
Absorption coefficient, 129
Direct and indirect semiconductors, 130
Absorption of energy, 99
AC conductance, 308
AC diffusion length, 311
AC injected charge distribution, 310
Access resistance, 378, 395
Active mode, 253
Admittance, 309
Airy function, 79
Al 2 O 3 ,21
AlxGa 1 −xN, 388
AlGaN/GaN HFETs, 68, 394
Alloy scattering, 104, 107
Relaxation time, 107
Apparent diffusion capacitance, 335
Arsenic-rich, 13
Attenuation vs. wavelength, 195
Avalanche breakdown, 113, 178, 283
Average rate of ionization per unit distance,
113
Back-barriers, 398
Ballistic transport, 111
Band-to-band transition, 128
Band-to-band tunneling, 114
Bandedge lineups in heterostructures, 74
Type I, 73
Type II, 73
Type III, 74
Bandedge lineups in materials, 75
Bandgap, 44
Temperature dependence, 52
Bandgap grading, 71, 237, 238
Bandgap shrinkage, 265
Bandstructure, 46
AlAs, 50
Alloy, 73
AlN, 51
GaAs, 49
GaN, 51
Ge, 50
InN, 51
Si, 47, 48
Base transport factor, 263
Base widening, 274, 278
Base width modulation, 280
Basis, 2
β, 251, 266, 270
Bipolar junction transistor, 246
Avalanche breakdown, 283
Base, 249
Base current, 253
Base transport factor, 251, 264
Base widening, 278
Base width modulation, 280
β-requirements, 270
Biasing, 253
Biasing in circuits, 259
Collector, 249
Collector current, 250, 258
Collector efficiency, 264
Current amplification factor, 251