66 CHAPTER 2. ELECTRONIC LEVELS IN SEMICONDUCTORS
(b)(c)(^1001234567891011)
(^1012)
(^1013)
14
1015
1016
1017
1018
1019
1020
A
B
C
Hole Concentration (cm
-3)
1000/T (1/K)
(^10012345678)
14
1015
1016
1017
1018
1019
1020
D
E
F
Hole Concentration (cm
-3)
1000/T (1/K)
100 1000
10 -1
100
101
102
A B C D E F
Mobility (cm
2 /Vs)
Temperature (K)
Cp 2 Mg flow
Sample Growth sccm
nmol/
min ΔEA (meV) NA (cm-3) ND (cm-3)
A 990206PB 15 24.4 190 1.8× 1019 1.1× 1018
B 990206PA 26 42.3 174 4.6× 1019 3.0× 1018
C 990205PD 47 76.5 152 1.4× 1020 1.2× 1019
D 980901PA 83 135 118 2.2× 1020 4.1× 1019
E 990205PC 140 228 112 8.6× 1019 2.7× 1019
F 980901PE 263 428 165 7.6× 1018 5.0× 1018
(^) (a)
Figure 2.23: Measured properties of a deep acceptor: Mg doping of GaN. (a) Doping parameters
for six different samples. (b) Hole concentration as a function of temperature. Notice that for all
these samples, when the temperature is not extremely high, the hole concentration is much less
than the effective acceptor concentrationNA−ND, since deep acceptors are not fully ionized
at lower temperatures. (c) Hole mobility as a function of temperature. Figures are from the PhD
dissertation of Peter Kozodoy, UCSB.