INDEX 763
charge conductivity, 264
charge pair production, 257
charge recombination, 261
compensated, 251
crystal imperfections, 262
donor impurity, 255
doping, 252
drift of charges, 265
electron lifetime, 238
extrinsic, 251
Fermi level, 251, 254
gallium arsenide (GaAs), 266, 279
germanium, 275
germanium (Ge), 266
hole, 223
intrinsic, 251
n-type, 255
silicon, 254
semiconductor detector, 249
avalanche photodiode, 301
energy resolution, 260
frequency response, 294
heterojunction diode, 300
microstrip, 446
photoconductive mode, 295
photodiode, 300
photovoltaic mode, 295
PIN diode, 298
pn junction, 284
radiation damage
annealing, 305
damage coefficient, 303
leakage current, 303
NIEL scaling, 302
type inversion, 304
Schottky diode, 299
surface barrier, 301
shielding, 664
shot noise, 513
Sievert, 608
signal to noise ratio, 212
signal transport, 474
signal-to-noise ratio, 440
single channel analyzer, 496, 720
skewness, 532
solid state dosimetry, 642
space charge, 202
spatial DQE, 438
spatial frequency, 429
spatial resolution, 423
spatial sampling, 425
specific energy, 650
spectroscopy
γ-ray, 673
x-ray absorption, 678
spectrum, 3
black body, 3
Spencer-Attix cavity theory, 621
spin echo spectrometer, 709
spontaneous fission, 4, 7
SSNTD, 653
Stoke’s law, 337
stopping power, 110, 116, 151
Bethe-Bloch formula, 113
Student’stdistribution, 543
Student’sttest, 553
surface barrier detector, 301
synchrotron radiation, 35TAS, 704
tenth value layer, 665
TEPC, 651
terma, 618
thermalization, 191
thermalization rate, 235
thermoluminescence, 313
thermoluminescent material, 312
Thompson scattering, 86, 94
time series analysis, 561
smoothing, 562
time spectroscopy, 719
time to amplitude converter, 719
tissue equivalence, 645
tissue weighting factors, 608
TLD, 312, 330, 451
TLD dosimetry, 627
Townsend coefficient
first, 163, 231
second, 166
track etch dosimetry, 635
transmutation, 139
twisted pair cable, 479
type inversion, 304undersampling, 507VME standard, 726