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a low concentration (0.005%) of MMS, they
were sensitive to higher concentrations (≥0.01%)
of MMS (fig. S2). We observed thatpol3ITD
cells in a WT RAD27 background were also
sensitive to high concentrations of MMS (fig.
S2). This at least partially explains why the
pol3ITD could not suppress MMS-induced
lethality ofrad27Dcells at high MMS concen-
trations. In addition,pol3ITD did not rescue
the synthetic lethality that occurred in the con-
text ofrad27Dcoupled with deficiency of the
5 ′nucleasesEXO1orDNA2nuclease-helicase
(tables S2 and S3 and supplementary text S2).
Two types of duplications were present in
the revertants:pol3 591 – 598ITD(fig.S3,Aand
B), a previously reported classic duplication re-
sulting from the realignment and ligation of
unprocessed 5′flaps ( 12 ), andpol3 458 – 477 ITD,
which contained a 55–base pair (bp) duplica-
tion with a 5-bp spacer between the duplicated
units (fig. S3, C and D). We named the dup-


lication with an intervening spacer an“alter-
native duplication.”Bothpol3 591 – 598 ITD and
pol3 458 – 477 ITD resembled ITDs detected in
human cancer ( 13 – 15 ). To determine how the
alternative duplicationpol3 458 – 477 ITD was
created, we conducted WGS of WT andrad27D
cells grown at 37° or 30°C for 4 hours. The
mutation frequency of WT cells was the same
at both temperatures (Fig. 2A). By contrast,
the mutation frequency ofrad27Dcells in-
creased by twofold at restrictive temperature;
in particular, the frequency of duplications
and base substitutions was increased (Fig. 2A).
In addition, duplication insertions inrad27D
cells grown at 37°C were considerably longer
than those inrad27Dcells grown at 30°C (Fig.
2B). We found thatrad27Dcells grown at 37°C
exhibited alternative duplications similar
to thepol3 458 – 477 ITD. The alternative dup-
lications were not detected in WT cells (30°
or 37°C) or inrad27Dcells grown at 30°C

(Fig. 2C), suggesting that alternative dupli-
cations were induced by restrictive tempera-
ture stress.
We further noted that the sequences of
these alternative duplications suggested the
formation of three different types of hairpin
structures (Fig. 2D; fig. S4, A to D; and sup-
plementary text S3). This supported a model
of sequential actions, including the conver-
sion of a 5′Okazaki fragment flap to a 3′flap,
annealing of the flap to a complementary se-
quence, extension of the 3′flap, realignment,
and ligation of the extended 3′flap to produce
an alternative duplication, likepol3 458 – 477
ITD. Consistent with this model, our WGS data
indicated that 40% of the alternative duplica-
tions also carried base substitutions at the dup-
lication unit. These substitutions most likely
resulted from failure to remove Pola-generated
errors on the 5′flap. To determine if the re-
strictive temperature induced 3′flap formation

SCIENCEscience.org 3 DECEMBER 2021•VOL 374 ISSUE 6572 1253


Fig. 1.pol3ITD and
missense mutations drive
resistance torad27D-
induced conditional
lethality.(A) Spot assays
of WT,rad27D, orrad27D
revertant (Rev) yeast cells
grown at 30°C (optimal tem-
perature), 25°C (suboptimal
temperature), or 37°C
(restrictive temperature) for
48 hours.rad27D::URA3and
rad27D::LEU2represent the
rad27Dallele with a linked
URA3orLEU2selection
marker gene, respectively.
(B)pol3mutations detected
in independent revertant
strains (n= 31). Circles and
diamonds represent base
substitution and ITD muta-
tions, respectively. The
domain structures were
defined as previously
described ( 23 ). aa, amino
acid; H495Q, His^495 →Gln;
P965T, Pro^965 →Thr. (C) Spot
assays of WT,rad27D, or
rad27Dyeast cells with indi-
catedpol3knock-in mutations
grown at 30°, 25°, or 37°C
for 48 hours.POL3::HIS3rep-
resents thePOL3(WT or
mutant) alleles with a linked
HIS3selection marker gene.

A
WT
rad27Δ::URA3
rad27Δ::LEU2#1

rad27Δ::LEU2#2
Rev

30°C 25°C 37°C

B
(458-477) ITD

(591-598) ITD
R470GR475IA484V S847Y

NT-1 NT-2 Exo I Exo II
Pol IV

Exo III Pol II
Pol VI

Pol III Pol I Pol V
C T- 1

CT-2 CT-3 ZnF1 ZnF2

0

5

20

# of

pol3

mutations

P965T

0 100 200 300 400 500 600 700 800 900 1000 1097 aa

H495Q

C

POL3::HIS3

WT

rad27Δ::URA3

rad27Δ::LEU2

WT

ITD

R475I

S847Y

rad27Δ::LEU2
POL3::HIS3

30°C 25°C 37°C

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