0195136047.pdf

392 SEMICONDUCTOR DEVICES

VDS, V

VGS ≤ 2.5 V

5.5 V VGS = 5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

ID, mA

10

8

6

4

2

(^0246810121416)
Figure P7.4.17
D
S

• 
  


• 
  

  − −
  G
  vGS = v
  v
  iD
  0 A
  iD
  Figure P7.4.20
  *7.4.23A depletion MOSFET is given to have largeVA,
  VP= 2 .8V,IDSS= 4 .3 mA,vDS= 4 .5V,and
  vGS= 1 .2V.
  (a) Is the MOSFET operating in the active region?
  (b) FindiD.
  (c) Comment on whether the device is operating
  in the depletion mode or in the enhancement
  mode.