424 DIGITAL CIRCUITS
VCC = 5 V
VT = 0.7
1
5
4
3
2
1
0.2 to 0.3 V
2345
IB sat = 50
60 μA
50 μA
40 μA
30 μA
20 μA
10 μA
0.5
Saturation
Cutoff
1
Vi
Vi
VO = vCE
RC
RB
RB
vBE
vBE, V
iC
iB
iB, μA
vCE, V
iC, mA
(a)
(b)
Slope = −
− −
+
−
+
+
vCE
−
+
+
1
1
2
2
VCE cutoff VCC
VCC
VCC
RC
VCE sat = Vsat
IC cutoff = ICEO iB =^0
IC sat
Figure 9.1.2BJT inverter switch.(a)Circuit withnpnswitching transistor.
(b)Typical operation using load lines.
Thus, the transistor behaves like an ideal switch, as shown in Figure 9.1.3. It can be shown that
saturation will occur when
Vi−VT
RB
>
VCC−Vsat
βRC
or Vi>(VCC−Vsat)
RB
βRC
+VT (9.1.6)
The power dissipated in the transistorp=vCEiC+vBEiB∼=vCEiCis very small or approximately
zero in either cutoff or saturation. It should be noted, however, that power is expended in switching
from one state to the other, going through the linear or active region.