0195136047.pdf

PROBLEMS 445

vGS

VT

iD

vDS

iD

VDD

VDD

vGS = VT

vGS = Von

Vsat

RD

t

Vi

(c)

(b)

(a)

Saturation

Cutoff

4 V

3 V

2 V

1 V

D

S

Vi

Vo

RD

+VDD

G

Figure P9.3.3(a)n-channel enhancement MOSFET switch.(b)Characteristics (transfer characteristics; terminal

characteristics and load line).(c)Input.