0195136047.pdf

16.1 POWER SEMICONDUCTOR-CONTROLLED DRIVES 751

TABLE 16.1.1Converters and Their Functions for the Control of Motors

Converter Conversion Function Applications

Controlled rectifiers Ac to variable dc Control of dc motors and
synchronous motors
Choppers Fixed voltage dc to variable voltage
dc

Control of dc motors

Ac voltage controllers Fixed voltage ac to variable-voltage
ac at same frequency

Control of induction motors

Inverters (voltage source or
current source)

Dc to fixed or variable voltage and

frequency ac, voltage or current

source

Control of induction motors and

synchronous motors

Cycloconverters Fixed voltage and frequency ac to
variable voltage and frequency ac

Induction motors and synchronous

motors

MOS-controlled thyristors (MCT) are rated for 3 kV, capable of interrupting around 300 A with
a recovery time of 5μs. Gate turn-off (GTO) thyristors can control 1 to 3 kA with a blocking
voltage capability of 6 to 8 kV. Table 16.1.3 gives the symbols and thev-icharacteristics of the
commonly used power semiconductor devices.
Figure 16.1.4 illustrates the output voltages and control characteristics of some commonly
used power switching devices. The switching devices can be classified as follows:

TABLE 16.1.2Typical Ratings of Power Semiconductor Devices

Voltage/Current Switching On

Type Rating Time (μs) Voltage/Current*

Diodes General purpose
High speed
Schottky

3 kV/3.5 kA

3 kV/1 kA

40 V/60 A

2–5

0.23

1.6 V/10 kA

3 V/3 kA

0.58 V/60 A

Forced-turned-off
thyristors

Reverse blocking

High speed

Reverse blocking

Reverse conducting

GATT

Light triggered

3 kV/1 kA

1.2 kV/1.5 kA

2.5 kV/400 A

2.5 kV/1 kA/R400 A

1.2 kV/400 A

6 kV/1.5 kA

400

20

40

40

8

200–400

2.5 V/10 kA

2.1 V/4.5 kA

2.7 V/1.25 kA

2.1 V/1 kA

2.8 V/1.25 kA

2.4 V/4.5 kA

TRIACs 1.2 kV/300 A 1.5 V/420 A

Self-turned-off
thyristors

GTO

SITH

3.6 kV/600 A

4 kV/2.2 kA

25

6.5

2.5 V/1 kA

2.3 V/400 A

Power transistors Single

Darlington

400 V/250 A

400 V/40 A

630 V/50 A

900 V/200 A

9

6

1.7

40

1 V/250 A

1.5 V/49 A

0.3 V/20 A

2V

SITs
Power MOSFETs

1.2 kV/10 A

500 V/8.6 A

1 kV/4.7 A

500 V/10 A

0.55

0.7

0.9

0.6

1.2

0.6

2 

0.4

Source:F. Harashima, “State of the Art on Power Electronics and Electrical Drives in Japan,” inProc. 3rd IFAC Symposium on Control in
Power Electronics and Electrical Drives(Lausanne, Switzerland, 1983), Tutorial Session and Survey Papers, pp. 23–33.
*Note: On voltage is the on-state voltage drop of the device at a specified current.