0195136047.pdf

752 BASIC CONTROL SYSTEMS

TABLE 16.1.3Symbols andv–iCharacteristics of Some Power Semiconductor Devices

Diode

AK

AK

VD

VG

ID

Device Symbol Characteristics

ID

+G

−

Thyristor

AK

IA

G

GTO

A

ID B

G

Gate triggered

TRIAC

G

C

E

A K

ID

LASCR

0

B

IB IC

IB

IE

IE

IC

NPN BJT

ID

PNP BJT

n-channel

MOSFET

p-channel

MOSFET

C

E

B

D

S

G

ID

VDS

VGS 1

VGS 1 < VGSn

VGSn

D

S

G

0 VDS

VGS 1

ID

ID

ID

ID

ID

ID

ID

IC

IC

VGS 1 > VGSn

VGSn

0 VEC

IBn

IBn > IB 1

IB 1

IBn

IBn > IB 1

IB 1

0

0

0

0

0

0

VCE

VD

VD

VD

VD

Gate triggered

Gate triggered

Gate triggered

Gate triggered

VD

• Uncontrolled turn-on and turn-off (diode)


• Controlled turn-on and uncontrolled turn off (SCR)


• Controlled turn-on and turn-off (BJT, GTO, MOSFET)


• Continuous gate signal requirement (BJT, MOSFET)


• Pulse gate requirement (GTO, SCR)


• Bipolar voltage capability (SCR)


• Unipolar voltage capability (BJT, GTO, MOSFET)


• Bidirectional current capability (RCT, TRIAC)


• Unidirectional current capability (BJT, diode, GTO, MOSFET, SCR).