Example 5.6
(a) The quantum efficiency for InGaAs is around 90 % for the wavelength
range 1300 nm <λ< 1600 nm. Show that in this wavelength range the
responsivityR= 7.25× 105 λ.
(b) Show that at 1300 nm the responsivityR= 0.92 A/W.
(c) At wavelengths higher than 1600 nm the photon energy is not sufficient
to excite an electron from the valence band to the conduction band. If the
material In0.53Ga0.47As has an energy gap Eg= 0.73 eV, what is the
cutoff wavelength?
(d) Why does the responsivity drop off at low wavelengths?
Solution:
(a) From Eq. (5.8)
R¼
gq
hm
¼
gqk
hc
¼
ðÞ 0 : 90 ðÞ 1 : 6 10 ^19 Ck
ðÞ 6 : 625 10 ^34 JsðÞ 3 108 m=s
¼ 7 : 25 105 k
(b) From the above equation, at 1300 nm
R¼½ 7 : 25 105 ðA=WÞ=mð 1 : 30 10 ^6 mÞ¼ 0 :92 A=W
(c) From Eq. (5.4)
kcðlmÞ¼
hc
Eg
¼
1 : 240
0 : 73
¼ 1 : 70 lm
InGaAs
Ge
Si
0.7 0.9 1.1 1.3 1.5 1.7
0.2
0.4
0.6
0.8
1.0
Wavelength (μm)
Responsivity (A/W)
Fall off due to
insufficient
photon energy
Fall off due to most
absorption in the
p region
Fig. 5.4 Comparison of the
responsivity and quantum
efficiency as a function of
wavelength forpin
photodiodes constructed of
three different materials
126 5 Fundamentals of Optical Detectors