The multiplication M for all carriers generated in the photodiode is defined by
M¼
iM
ip
ð 5 : 9 Þ
where iMis the average value of the total multiplied output current and ipis the
primary unmultiplied photocurrent defined in Eq. (5.6). In practice, the avalanche
mechanism is a statistical process, since not every carrier pair generated in the diode
experiences the same multiplication. Thus, the measured value of M is expressed as
an average quantity.
Analogous to thepinphotodiode, the performance of an APD is characterized by
its responsivityRAPD, which is given by
RAPD¼
gq
hm
M¼RM ð 5 : 10 Þ
whereRis the unity gain responsivity.
Example 5.7A given silicon avalanche photodiode has a quantum efficiency
of 65 % at a wavelength of 900 nm. Suppose 0.5μW of optical power
produces a multiplied photocurrent of 10μA. What is the multiplication M?
Solution: First from Eq. (5.8) the primary photocurrent generated is
ip¼RPin¼
gqk
hc
Pin¼
ðÞ 0 : 65 ðÞ 1 : 6 10 ^19 CðÞ 9 10 ^7 m
ðÞ 6 : 625 10 ^34 JsðÞ 3 108 m=s
5 10 ^7 W
¼ 0 : 235 lA
Then from Eq. (5.9) the multiplication is
M¼
iM
ip
¼
10 lA
0 : 235 lA
¼ 43
Thus the primary photocurrent is multiplied by a factor of 43.
5.3 Photodiode Noises
5.3.1 Signal-to-Noise Ratio
When detecting a weak optical signal, the photodetector and its following ampli-
fication circuitry need to be designed so that a desired signal-to-noise ratio is
128 5 Fundamentals of Optical Detectors