Scanning Electron Microscopy and X-Ray Microanalysis

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excess of SEs compared to the bulk interior. In addition,
there will be enhanced escape of BSEs near the edge, and
these BSEs will likely strike other nearby specimen and
instrument surfaces, producing even more SEs. All of the
signals collected when the beam is placed at a given scan
location are assigned to that location in the image no matter
where on the specimen or SEM chamber those signals are
generated. The apparent SE emission coefficient when the
beam is placed near an edge is thus greatly increased over
the bulk interior value, often by a factor of two to ten
depending on the exact geometric circumstances. The edges
of an object will appear very bright relative to the interior of
the object, as shown in. Fig. 10.5 (e.g., objects in yellow
circles in. Fig. 10.5b) for particles of TiO 2. Since the edges
are often the most important factor in defining a feature, a
contrast mechanism that produces such an enhanced edge

signal compared to bulk is a significant advantage. This is
especially true considering the limitations that are imposed
on high resolution performance by the demands of the
Threshold Current/Contrast Equation, as discussed below.

10.4.2 Even More Localized Signal: Edges


Which Are Thin Relative to the Beam


Range


The enhanced SE escape near an edge shown in. Fig. 10.4
is further increased when the beam approaches a feature
edge that is thin enough for penetration of the beam elec-
trons. As shown schematically in. Fig. 10.6, not only are
additional SEs generated as the beam electrons emerge as
“BSEs” through the bottom and sides of the thin edge

100 nm

a b

100 nm EHT = 5.00 kV
WD = 1.4 mm

Signal A = InLens
Mag = 151.08 K X

Date :30 jul 2015
Time :17:54:00

. Fig. 10.5 a SEM image at E 0 = 5 keV of TiO 2 particles using a through-the-lens detector for SE 1 and SE 2 (Bar = 100 nm). b Note bright edge
effects and convergence of bright edges for the smallest particles (Example courtesy John Notte, Zeiss)


SE 1
SE 1

SE 1 SE (^2) SE 2
SE 1
SE (^2) SE 2
SE 2
BSE SE 2
SE 1 BSE SE 1
BSE
SE 1
SE 2
SE 2
BSE
BSE
BSE BSE
BSE


. Fig. 10.6 Schematic diagram
of the enhanced BSE and SE pro-
duction at an edge thin enough
for beam penetration. BSEs may
strike multiple surfaces, creating
several generations of SEs


Chapter 10 · High Resolution Imaging
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