32220
a24 000
22 000
20 000
18 000
16 000
14 000
12 000
10 000
8 000
6 000
4 000
2 000
0
3.0 3.5 4.0 4.5 5.0
Photon energy (keV)Counts5.56.0 6. 57 .0K2496
O
Si
Ti
Ba
Ba/Ti =0.323
0.229
0.018
0.430
23.9K2496 glass
E 0 = 10 kev
1000 nA-s
0.1-10keV integral = 12,175,000 counts
SiO 2
BaSi 2 O 5 (Sanbornite) for Ba
Tib01 0002 0003 0004 0005 0006 000Counts3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
Photon energy (keV)K2496 glass
SiO 2
BaSi 2 O 5 (Sanbornite) for Ba
No peak fitting for TiK2496_1_10kV20nAMED73kHz8DT_100s
Residual_K2496_1_10kV20nAMED73kHz8DT_100s]K2496_10kV20nA8%DT
Residual_K2496_10kV20nA8%DT. Fig. 20.8 a SDD-EDS spectrum of NIST microanalysis glass K2496
(red) at E 0 = 10 keV (12,175,000 counts) and residual (blue) after DTSA II
analysis using BaSi2O 5 (sanbornite) and Ti as fitting references and stan-
dards. b Same analysis protocol, but not including Ti in the peak-fitting.
Note low level peaks for Ti K-L2,3 and Ti K-M 3 (Ba L-family peaks marked
as green lines). Table 20.8 Analysis of NIST microanalysis glass K2496 at E 0 = 10 keV with Ti and sanbornite (BaSi 2 O 5 ) as fitting references and
standards; integrated spectrum count = 12,175,000. Analysis performed with O K- L2,3, Si K-L2,3, Ti K-L2,3 and Ba L 3 -M4,5
O Si Ti BaCav (atom frac) 0.6228 0.2585 0.01171 0.1069
Z-correction 0.984 0.983 0.983 0.98
A-correction 0.966 1.017 0.986 1.001
F-correction 1 1 1.01 1
σ (7 replicates) 0.000158 0.000277 0.000217 0.000226
σRel (%) 0.03 % 0.11 % 1.80 % 0.21 %
RDEV (%) −1.70 % 0.99 % −0.64 % 8.70 %
C (mass frac) 0.3066 0.223 0.0177 0.4527
Counting error, std 0.0002 0.0002 1.10×10–5 0.0008
Counting error, unk 0.0002 0.0001 0.0004 0.0007
A-factor error 0.0021 8.80×10–5 3.90×10–6 1.20×10–5
Z-factor error 0.0003 2.70×10–5 1.80×10–7 4.00×10–6
Combined errors 0.0021 0.0002 0.0004 0.0011Chapter 20 · Quantitative Analysis: The SEM/EDS Elemental Microanalysis k-ratio Procedure for Bulk Specimens, Step-by-Step