Scanning Electron Microscopy and X-Ray Microanalysis

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2

5 keV 10 keV

20 keV 30 keV

. Fig. 2.13 BSE images at various incident beam energies of a semiconductor device consisting of silicon and various metallization layers at dif-
ferent depths
. Fig. 2.14 Cumulative radial distribution
of backscattered electrons in various bulk
pure elements at 0° tilt showing determina-
tion of 90 % total backscattering radius

Chapter 2 · Backscattered Electrons