Article reSeArcH
Titanium(e) Gate dielectric:
Atomic layer deposition (ALD):
(Al 2 O 3 + HfO 2 , 300 C)Extended Data Fig. 1 | Fabrication process flow for RV16X-NANO. The fabrication process is a 5-metal-layer (M1 to M5) process and involves > 100
individual process steps. s-CNT, semiconducting CNT; S/D, source/drain.