512 | Nature | Vol 582 | 25 June 2020
Article
boron nitride (a-BN) have been investigated as potential low-κ die-
lectrics, showing promising results^5. However, recent reports on BN
dielectrics show films with turbostratic structure or high dielectric
constants that indicate crystalline structure^15 ,^16. In this study, we
utilized low-temperature remote inductively coupled plasma–chemical
vapour deposition (ICP-CVD; see Methods) to obtain 3-nm-thick BN
layers on Si substrates (see Extended Data Fig. 1 for growth on Cu and
SiO 2 substrates). The transmission electron microscopy imaging andbcde5 nm2 nma500 nmFig. 1 | Atomic structure of a-BN. a, Low-magnification TEM image of a-BN. b,
Selected-area electron diffraction image showing a diffuse pattern with no
discernible crystalline rings. c, High-resolution TEM image. d, Magnification of
the area indicated by the red box in c, showing a disordered atomic arrangement.
e, Fast Fourier transform results for the area depicted in d, demonstrating a
diffuse diffraction pattern that is typical of an amorphous film.1,700 1,600 1,500 1,400 1,300–0.0 10.000.010.020.030.041,260 1,400 1,540 1,68006001,2001,800Raman shift (cm–1)a-BN
SiO 2 /Si196192 1881840369121518Binding energy (eV)Intensity (a.u.)Boron 1 s Nitrogen 1 sdabce190 195 200 205 21002468102468 30 °
55 °
70 °S*V*4024003983963940204060Binding energy (eV)Absorption(a.u.)Intensity (a.u.)Intensity (a.u.)Wavenumber (cm–1) Energy (eV)Trilayer hBNE1u (LO) E1u (TO)Fig. 2 | Chemical structure of a-BN. a, b, XPS profiles for the B 1s (a) and N 1s (b)
peaks. c, Raman spectra of a-BN and epitaxially grown trilayer hBN (used as a
reference) on a SiO 2 (300 nm)/Si substrate. The Raman spectrum of the SiO 2
substrate is identical to that of a-BN, suggesting that no distinct crystalline hBN
modes are present in a-BN. d, FTIR spectrum measured using s-polarized
radiation at an incident angle of 60°. The absorption peaks near 1,370 cm−1 and
1,570 cm−1 are attributed to transverse optical (TO) and longitudinal optical
(LO) modes of BN, respectively. e, PEY-NEXAFS spectra for the B K edge of a-BN,
measured at incident angles of 30°, 55° and 70°, showing no dependence on
orientation. a.u., arbitrary units.