a
hi
036912
0.0
0.5
1.0
1.5
Time(h)
OD
600
induced, +NAM
uninduced, +NAM
uninduced,−NAM
induced,−NAM
SfSTING WT NAM supplementation
0 36912
0.0
0.5
1.0
1.5
Time(h)
OD
600
induced, +NAM
uninduced, +NAM
uninduced,−NAM
induced,−NAM
SfSTING D259A NAM supplementation
10 −3 10 −2 10 −1 100 101 102
0
2×10^5
4×10^5
6×10^5
8×10^5
[c-di-GMP] (μM)
ε-NAD
Cleavage
(RF
U)
WT
N163A K167A S262A
F165A R168A T263A
SfSTING mutant ε-NADturnover after 1 h
b
Residue mutated in SfSTING
(FsSTING equivalent)
Observed 3 ', 3 '-cGAMP
contact in FsSTING
N163 (N91)
F165 (F92)
K167 (F94)
R168 (P95)
D259 (D169)
S262 (N172)
T263 (T173)
R234 (R153)
Phosphodiester bond
Base stacking (outer face)
None/predicted only for SfSTING
None/predicted only for SfSTING
N2 of guanosine base
Phosphodiester bond
Potential clash with free 3 '-OH
of 2 '–5' linked CDNs
Base stacking (inner face)
Amino acids targeted for mutagenesis
f
1.52.0 2.53.0 3.5
0.0
0.5
1.0
Retention time (min)
Normalized absorbance 254 nm
WT Apo
WT + c-di-GMP
E84A + c-di-GMP
R234A + c-di-GMP
D259A + c-di-GMP
g
WT E84A R234A D259A
0
2×10^5
4×10^5
6×10^5
ε-NAD Cleavage (RFU
)
—+ —+ —+ —+
cd
c-di-AMPc-d
i-GMP
3',3'-cGAMP2',3'-cGAMPc-di-AMPc-di-GM
P
3',3'-cGAMP2',3'-cGAMP
SfSTING Mutant:R234A D259A
Free
CDN
[α^32 P] CDN:
Well
STING–CDN
Complex
STING:—
SfSTING D259A (TIR)
Free
c-di-GMP
Well
STING–CDN
Complex
100 nm[SfSTING D259A] (μM)
10 −3 10 −2 10 −1 100 101 102 103
0.0
0.4
0.8
1.2
Fraction
boun
d
c-di-GMP
WT fit
Kd= 28.78 μM (2 orders of magnitude shift)
e
Extended Data Fig. 6 | See next page for caption.