SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

408 CHAPTER 8. FIELD EFFECT TRANSISTORS

50 100 150 200 250 300

0

10

20

30

40

50

60

RFR

DS

(

Ω

·mm)

LG (nm)

Std. HEMT

InGaN back-barrier

Figure 8.34: RF output resistance in standard AlGaN/GaN HEMTs and in HEMTs with en-
hanced confinement due to the use of an InGaN back-barrier.

Figure 8.35: Change ingmand pinch off withVDSin a standard AlGaN/GaN HEMT and in a
HEMT with an InGaN back-barrier.