510 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES
2. 0 μm× 0. 1 μm in which a 1 V gate bias changes the electron density in the channel from
1012 cm−^2 to 108 cm−^2 , thus switching the device from ON to OFF. What is the switching
energy?
Estimate the switching energy if quantum interference effects were used in the same
device.
Problem 10.9Consider a 2-dimensional electron channel in a AlGaAs/GaAs device. The
gate length is 0.1μm and gate width is 2.0μm. The device is biased so that the electron
density in the channel is 1012 cm−^2. How much will the electron number in the channel
change ifΔσ=2e^2 /h? Use a semi-classical model with mobility 105 cm^2 /V·s.
Problem 10.10Consider a metal-oxide-silicon capacitor. At what areal dimensions will it
display Coulomb blockade effects at 300 K? The relative dielectric constant of SiO 2 is 3.9
and the oxide thickness is 25A. ̊
Problem 10.11Consider a single electron transistor based on a MOSFET in which the
gate capacitance is 10 −^18 F. The gate capacitor state is altered by a single electron (at very
low temperatures). Calculate the change in the device channel current if the device
transconductance is
gm=
δI
δVG
=1.0S
10.8 Further Reading...................................
- Mesoscopic Structures
- Articles inNanostructure Physics and Fabrication(editedbyM.A.ReedandW.P.
Kirk, Academic Press, New York, 1989).
- Datta, Supriyo,Electronic Transport in Mesoscopic Systems(Cambridge University
Press, 1995).
- Ferry,D.K.,Semiconductors(Macmillan, New York, 1991).
- Gradert, Hermann and H. Michel, Editors,Single Charge Tunneling: Coulomb Block-
ade Phenomenon in Nanostructures(NATO ASI Series,B, Physics, vol. 294), Plenum
Publishing Corporation, 1992.
- Janssen, Martin,Fluctuations and Localization in Mesoscopic Electron Systems(World
Scientific Publishing Company, 1991).
- Landauer, R., Philos. Mag., 21 , 863 (1970).
- Murayama, Yoshinasa,Mesoscopic Systems, (John Wiley and Sons, 2001).
- Physics Today, (Dec. 1988). Covers the important aspects of physics in mesoscopic
structures.
- Van Wees, B. J., H. Van Houten, C. W. J. Beenakker, J. L. Williamson, L. P. Kauwen-
hoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett., 60 , 848 (1988).
