SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

(Greg DeLong) #1
520 APPENDIX B. BOLTZMANN TRANSPORT THEORY

Substituting for the partial time derivatives due to diffusion and external fields we get

−vk·∇rfk−

e


(

E+

vk×B
c

)

·∇kfk=

−∂fk
∂t

)

scattering

(B.10)

Substitutingfk=fk^0 +gk


−vk·∇rfk^0 −e(E+vk×B)∇kfk^0
=−∂f∂tk

)

scattering

+vk·∇rgk+e(E+vk×B)·∇kgk

(B.11)

We note that the magnetic force term on the left-hand side of equation B.11 is proportional to


vk·

e


(vk×B)

and is thus zero. We remind ourselves that (the reader should be careful not to confuseEk,the
particle energy andE, the electric field)


vk=

1



∂Ek
∂k

and (in semiconductor physics, we often denoteμbyEF)


fk^0 =

1

exp

[

Ek−μ
kBT

]

+1

Thus


∇rf^0 =


[

exp

(

Ek−μ
kBT

)]

[

exp

(

Ek−μ
kBT

)

+1

] 2 ∇r

(

Ek−μ(r)
kBT(r)

)

= kBT·

∂f^0
∂Ek

[


∇μ
kBT


(Ek−μ)
kBT^2

∇T

]

∇rf^0 =

∂f^0
∂Ek

[

−∇μ−

(Ek−μ)
T

∇T

]

(B.12)

Also


∇kf^0 =

∂f^0
∂Ek

·∇kEk

= vk

∂f^0
∂Ek

(B.13)
Free download pdf