Physics and Engineering of Radiation Detection

274 Chapter 5. Solid State Detectors

Figure 5.1.14: Dependence of hole mo-

bility on the donor density in silicon at

300 K(33). Solid line represents the the-

oretical prediction while the points rep-

resent the experimental data.

Kis given by

Eg =1. 17 − 4. 73 × 10 −^4

T^2

T+ 636

⇒Eg 1 =1. 17 − 4. 73 × 10 −^4

3002

300 + 636

=1. 12 eV

=1. 12 × 1. 602 × 10 −^19 =1. 794 × 10 −^19 J.

Similarly, the bandgap energy at 273Kis

Eg 2 =1. 17 − 4. 73 × 10 −^4

2632

263 + 636

=1. 13 eV.

=1. 13 × 1. 602 × 10 −^19 =1. 810 × 10 −^19 J.