12 · CHEMICAL FAMILIES
Semiconductors
Silicon and germanium are used as semiconductors. Semiconductors have electrical
resistances somewhere between those for conductors and insulators and the
electrical resistance of a semiconductor decreases as the temperature gets higher. In
metals, which are good conductors, the valence electrons are able to break free from
the individual atoms and move through the metal when a potential difference is
applied across it. In insulators, the valence electrons cannot move freely around the
material in the same way. The valence electrons in semiconductors, however, can
break free of their atoms if a little energy is applied. As the temperature rises more
valence electrons are able to break away (become delocalized) and the electrical
conduction of the substance increases. The semiconducting properties of silicon are
used in integrated circuits known as silicon chips. The element silicon contains
many silicon atoms covalently bonded to each other in tetrahedral arrangements so
that a giant molecule is built up. At very low temperatures, the electrons in the co-
valent bonds that hold the silicon atoms in place tend to stay associated with their
‘parent’ atoms. As silicon is heated, however, more of these electrons gain sufficient
energy to delocalize and the resistance of the silicon decreases.
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Semiconductors
(i)iDiamond is a very good
insulator because the
valence electrons around
its carbon atoms tend to
stay firmly in place. Why
do the electrons in Si–Si
covalent bonds delocalize
much more easily?
(ii)In a sample of silicon, if
electrons from Si–Si
covalent bonds are set
free, what stops the
structure from
collapsing?
Exercise 12J
BOX 12.5
Doping semiconductors
The electrical properties of semiconductors
can be changed by adding small amounts of
other substances. This process is known as
doping. In n-typesemiconductors, a small
number of Group 15 element atoms, such as
arsenic, are spread out in a sample of silicon.
The arsenic atoms use four of their five
valence electrons to bond with surrounding
silicon atoms and the fifth electron is
delocalised in the structure. This makes the
substance a much better electrical conductor
than pure silicon. The name n-type is derived
from the fact that the doped material has an
excess of negative charge. This is shown in
Fig. 12.3
If small traces of a Group 13 element, such
as boron, are added to silicon then a
deficiency of electrons is created. Boron has
only three valence electrons to bond with four
surrounding silicon atoms. The incomplete
covalent bond created contains a ‘hole’
where an electron should be. A neighbouring
valence electron from a silicon atom can jump
into this hole, creating a new hole ready to be
occupied by another electron, and so on. In
this way electrons move throughout the
sample and, again, the doped substance is a
better conductor of electric current. These
type of doped semiconductors are called
p-type; the prefers to an excess of positive
charge.
Fig. 12.3Ann-type semiconductor.
Hydrolysis of Group 14 chlorides
(i)iWrite a balanced equation for the hydrolysis of SiCl 4.
(ii)In the hydrolysis of SiCl 4 , Si–Cl bonds must be broken. Why is the Si–Cl bond easier to
break than a C–Cl bond?
Exercise 12I