ribbon perpendicular to the injection direction as the transverse ribbon. Transverse
ribbons are tilted witha= 45° to transverse direction on the mesh plane. Metal
contacts are mainly encapsulated in longitudinal ribbons. For active electronics,
some transverse ribbons also contain metal contacts to form the S/D electrodes of
FET. For passive metal electrode electronics, only longitudinal ribbons contain
metal contacts. Silicon nanowire devices and passive metal electrodes are patterned
either on the longitudinal ribbons in the center of unit cells or patterned separately
in a beam in the longitudinal direction on the transverse ribbons in the center of unit
cells to reduce strains for device during injection. For the ribbons containing metal
contact lines, 100-nm thick metal lines are encapsulated in the middle of two
Fig. 5.1 Optical images of electronics structure.aSchematics of injectable electronics. Black,
metal contact and I/O pads; orange, supporting polymer and blue, device.bOptical image of
passive metal electrode.cOptical image of nanowire FET (indicated by green arrow) device.
Source-drain electrodes are highlighted by white dashed lines.dOptical image of mesh region on
the mesh corresponds to green dashed box ina.d, eOptical image of I/O pads corresponds to
black dashed box ina
5.2 Experimental 67