Science - USA (2020-05-22)
to otherTriticumgenomes (table S5). The quality of the E genome assembly was vali- dated by assessment of the long terminal re- ...
resistance toF. graminearum, supporting that this gene representsFhb7(fig. S17). Sequence analysis of 22 ethyl methanesulfonate ...
The horizontal transfer of theFhb7sequence did not occur as a part of a gene cluster (pre- suming that it is fromE. aotearoaeas ...
Gene expression analysis in a time course of Fusariuminfection inTh. elongatumand the 7E2/7D substitution line (table S18) showe ...
knowledge on disease resistance gene evolu- tion and opens a new avenue for the identi- fication of plant resistance genes. The ...
REFERENCES AND NOTES J. K. Haileet al.,Fusariumhead blight in durum wheat: Recent status, breeding directions, and future resea ...
RESEARCH ARTICLE ◥ WATER RESOURCES Global threat of arsenic in groundwater Joel Podgorski1,2and Michael Berg1,3 Naturally occurr ...
Taking advantage of the increasing avail- ability of high-resolution datasets of relevant environmental parameters, we use stati ...
under the curve (AUC, 0.89) and Cohen’s kappa statistic (0.55) remained unchanged. The final random forest model was created bas ...
predictive value (NPV) comparison were found using the full dataset (combined training and test datasets) of arsenic concentrati ...
broken down by continent and country in tables S4 and S5, respectively, and represents the most accurate and consistent global e ...
of this study, as well as a University of Manchester EPSRC IAA Impact Support Fund Award to D. A. Polya.Author contributions: J. ...
DEVICE TECHNOLOGY Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics Lijun Liu^1 , Jie ...
Liuet al.,Science 368 , 850–856 (2020) 22 May 2020 2of7 Fig. 2. Preparation and characterization of an A-CNT array.(AtoD)Schemat ...
date, as the most important performance metric for FETs ( 28 ), the value ofgmin all fabricated FETs based on CNT arrays is usua ...
The CNTs in the 1,1,2-trichloroethane solu- tion did not adhere to the surface of the Si/ SiO 2 wafer (fig. S5), which is the pr ...
105 (Fig. 3, B and C). The peak transconduct- ancegmof the FET reached 0.9 mS/mm(atVds= 1 V; Fig. 3D), which is much higher tha ...
reflects the potential of CNT-array FETs with enhanced gate efficiency or lowered interface state density. Quantitative simulati ...
characterization to device/IC fabrication and device/IC characterization, and analyzed the results with Z.Z. and L.-M.P.; J.H. d ...
REPORT ◥ TOPOLOGICAL OPTICS Observation of Floquet solitons in a topological bandgap Sebabrata Mukherjeeand Mikael C. Rechtsman ...
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