SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

10.4. QUANTUM INTERFERENCE EFFECTS 497 where the longitudinal velocity is v= 1  ∂E ∂k and the net current is due to the electr ...

498 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES 1.5 1.0 0.5 0.0 VOLTAGE (V) 300 K C URRENT DENSITY (^10 4 A/cm 2 ) 24 ...

10.4. QUANTUM INTERFERENCE EFFECTS 499 A eik • 1 r A eik • 2 r A (eik 1 + eik • 2 d) Source Drain path 1 path 2 GaAs AlGaA ...

500 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES 10.5 MESOSCOPICSTRUCTURES.......................... In mesoscopic stru ...

10.5. MESOSCOPIC STRUCTURES 501 In small structures where phase information is retained we will see that conductance has quan- t ...

502 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES 10 8 6 4 2 0 Gate length 0.25μm –2 –1.8 –1.6 –1.4 –1.2 –1 GATE VOL ...

10.5. MESOSCOPIC STRUCTURES 503 systems, electron charging energy effects arising from Coulomb interactions between electrons ca ...

504 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES Junction with "Coulomb Blockade" – – I V I V – I V I V I V ...

10.6. MAGNETIC SEMICONDUCTORS AND SPINTRONICS 505 Current, I Voltage, V T > ~T 0 T < T 0 =928.5 KC(aF) 80 mV C(aF) Figure ...

506 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES possible to develop electronic devices that are dependent on the spin ...

10.6. MAGNETIC SEMICONDUCTORS AND SPINTRONICS 507 GaSb InAs GaSb – Fe Gate Fe x y z Ferromagnetic metal contact injection Fi ...

508 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES Spin-down Spin-up k( ) k( ) Ec + E Ec – E Ec k EF Figure 10.15: A sche ...

10.7. PROBLEMS 509 10.7 PROBLEMS .................................... Section 10.2 Problem 10.1Consider a GaAs sample in which ...

510 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES 2. 0 μm× 0. 1 μm in which a 1 V gate bias changes the electron density ...

Appendix A LIST OF SYMBOLS a lattice constant (edge of the cube for the semiconductor fcc lattice) B base transport factor in a ...

512 APPENDIX A. ALIST OF SYMBOLS EFn electron quasi-Fermi level EFp hole quasi-Fermi level Ee(Eh) energy of an electron (hole) i ...

APPENDIX A. LIST OF SYMBOLS 513 J current density JL photocurrent density Jph photon particle current density mean free path bet ...

514 APPENDIX A. ALIST OF SYMBOLS p momentum of a particle p hole concentration in the valence band pi intrinsic hole concentrati ...

APPENDIX A. LIST OF SYMBOLS 515 VSB source to body (substrate) potential Vr(Vf) reverse (forward) bias voltage in a diode VBE,VB ...

516 APPENDIX A. ALIST OF SYMBOLS χs electron affinity of a semiconductor φs work function of a semiconductor φms difference betw ...