SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

2.7. MOBILE CARRIERS 51

5

0

–5

k

L M K L A

ENERGY

(eV)

5

0

–5

k

L M K L A

ENERGY

(eV)

5

0

–5

k

L M K L A

ENERGY

(eV)

10

k 1

M K

Γ

L

H

A

k 2

kz

InN

GaN

AlN

Figure 2.15: Bandstructure of InN, GaN and AlN.

The electron density in the conduction band of a metal is related to the Fermi level by the
relation

n=

∫∞

Ec

√

2 m^30 /^2

π^2 ^3

E^1 /^2 dE

exp

(

E−EF

kBT

)

+1

(2.7.2)