554 INDEX
DC output conductance, 343
DC transconductance, 338
Ddrif t, 415
Defect, 15, 84, 163
Dislocation, 16
Impurity interstitial, 18
Point defect, 15
Self interstitial, 18
Substitutional, 18
Vacancy, 18
Deformation potential, 80, 100
Degeneracy of a state, 42
Delay
Base, 326
Base-collector capacitance, 326
Collector, 328
Emitter to collector, 326
Emitter-base junction, 326
δ-doping, 378, 380, 384
Density of states, 34, 529
1-D, 78
2-D, 34, 78, 382, 532
3-D, 34, 78
Material with defects, 85
Quantum well, 77
Density of states mass, 55
Electrons, 55
Holes, 56
Depletion approximation, 152
Depletion region, 147
Depletion width, 223, 365
Depletion-mode device, 358
Dielectric passivation, 378
Diffusion, 118, 121
Diffusion capacitance, 309, 312, 335
Diffusion coefficient, 121
Diffusion current, 138
Diffusion length, 137, 140
Dimer, 13
Diode conductance, 312
Diode ideality factor, 168
Dipole, 388
Dipole moment, 388
Direct bandgap, 46, 47
Dislocation, 21
Distribution function, 41
Donor energy level, 61
Doping in polar materials, 65
Doping of semiconductors, 60
Drain efficiency, 419
Drain resistance, 375, 413
Drain-to-channel capacitance, 413
Drain-to-source capacitance, 401
Drain-to-substrate capacitance, 413
Drift, 121
Drift velocity, 105Early effect, 264, 280
Early voltage, 282
Ebers-Moll model, 259
Effect of strain on bandedges, 82
Effective density of states, 57
Effective mass, 34, 60
Alloy, 73
Equation for the donor level, 61
Longitudinal mass, 48
Transverse mass, 48
Effective Newton’s equation, 40
Einstein relation, 121, 123
Electron affinity, 44, 147, 219, 232
Electron diffusion current, 121
Electron Fermi level, 125
Electron mobility, 106
Electron spin, 532
Electron-hole pair generation rate, 130
Electronic properties of alloys, 73
Electrons, 45
Electrons in crystalline solids, 33
Emission of energy, 99
Emitter crowding, 285
Emitter current, 257
Emitter injection efficiency, 251, 263
Emitter-base diode conductance, 335
Energy band, 122
Enhancement-mode device, 358
Equivalent circuit, 317, 413
BJT, 333