SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

INDEX 559

SiC, 21
Silicon dioxide-silicon junction, 230
Silicon nitride, 231
Six equivalent valleys, 48
Small signal capacitance, 306
Small signal equivalent circuit of a diode,
306
Small signal figures of merit, 340
fτ, 340
fmax, 341
Source resistance, 413, 414
Space charge transit time (τtransit), 415
Specific contact resistance, 230
Spin, 42
Split-off band, 47
Split-off energy, 47
Spontaneous emission rate, 200
Spontaneous polarization, 65
Storage delay time, 317
Strain energy, 20
Strain tensor, 69
Strained heterostructures, 17, 80
Strong injection, 131
Substrates, 194
Al 2 O 3 ,26
AlN, 26
GaAs, 26
GaN, 26
Ge, 26
InP, 26
InSb, 26
Si, 26
SiC, 26
ZnO, 26
Superlattice, 11
(GaAs) 2 (AlAs) 2 ,11
Surface, 12
Surface donor, 390, 392, 394
Surface state, 84, 389
Switching characteristics of diodes, 312

τtransit,see Space charge transit time

T-gate, 378

Tensile strain, 394

Three-dimensional electron slab, 68

Threshold voltage, 358, 387

Time-dependent continuity equation, 333

Transconductance, 264, 338, 367, 378, 411,

414

Transit time, 307, 414

Transition time, 317

Transport, 94, 121

Averaging procedures, 526

Triangular quantum well, 377, 382, 383

Tunneling, 180, 230, 396

Tunneling probability, 181

Turn-off, 315

Turn-on response, 313

UnbiasedP-Njunction, 146

Unit cell, 2

Vbr,see Breakdown voltage

vsat,see Velocity saturation

Vacuum energy, 44

Vacuum level, 147, 219

Valence band, 44, 83

Valence band discontinuity, 232

Velocity

Overshoot, 403, 430

Saturation, 111, 368, 415

Vertical transitions, 129

Weak injection, 132

Work function, 44, 147, 219

Wurtzite, 65, 67,see Crystal structure

Zener breakdown, 180

Zener diode, 115

Zener tunneling, 115, 181