558 INDEX
2DEG in polar heterostructures, 394
Charge, 388, 389
Dipole, 388, 390
Effects, 92
Fields, 388
Fields in an AlGaN/GaN heterostruc-
ture, 70
Piezoelectric, 375, 394
Polar HFET, 394
Polar materials, 388
Spontaneous, 375, 394
Polycrystalline silicon-silicon junction, 231
Power added efficiency, 419
Power amplifier
Class-A, 417
Load-line, 417, 418
Class-AB (class B), 420
Class-B
Bias point, 421
Circuit schematic, 420
Class-C, 421
Class-D,E,see switched mode
Switched mode, 421
Typical power obtainable, 422
Power gain cut-off frequency
Large signal (flsg), 415
Small signal (fmax), 415
Power-frequency (pf^2 ) limit, 415
Primitive unit cell, 2
Properties of some metals, 54
Pseudomorphic, 22
Quantum capacitance, 382
Quantum well, 11, 30, 76, 377
Density of states, 77
Finite barrierV 0 ,32
Infinite barrier, 32
Triangular potential, 79
Quasi-electric field, 238
Quasi-equilibrium, 124
RL,opt,see Optimum load resistance
Radiative lifetimes of electrons or holes in
a direct gap semiconductor, 201
Radiative recombination rate, 142
Ramo-Shockley theorem, 337
Reclaimable charge, 306
Recombination, 125
Recombination currents, 164
Recombination time fore-hpairs, 196
Reconstruction, 12
Reduced mass, 30
Relaxation time, 112, 525
Approximation, 521
Temperature dependence, 528
Resistivity, 217
Resonant tunneling current in an RTD, 497
Reverse active mode, 322
Richardson constant, 226Saturation current, 417
Saturation mode, 253, 322
Saturation regime, 368, 372, 373
Saturation region, 357
Scattering, 96
Scattering rate, 106
Schottky barrier, 219, 356, 360
Schottky barrier diode, 317
Built-in potential, 219
Capacitance voltage characteristics, 223
Depletion width, 223
Schottky barrier height, 219
Schrodinger equation, 28, 36 ̈
Screened coulombic potential, 102
Screening dipole, 388, 389
Semiconductor, 44
Semiconductor heterojunctions, 232
Series resistance, 413
Sheet charge density, 378, 395
Sheet resistance, 218, 396
Shockley analysis, 368
Shockley boundary conditions, 274
Shockley gradual channel approximation, 363
Short channel effects, 378
Si, 368
Si based HBTs, 346
Si bipolar technology, 345
Si 1 −xGex,83