SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS 537 LATTICE CONSTANTS AND BADGAPS OF SEMICONDUCTORS AT ROOM TEMPERATURE (^0) ...

538 APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS InSb 0.64 GaSb 0.62 AlSb 0.60 InAs 0.58 AlAs, GaAs 0.56 AlP, GaP 0.54 InP ...

APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS 539 Semi- Type of Temperature Dependence conductor Energy Gap 0 K 300 K of En ...

540 APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS Material Electron Mass Hole Mass (m 0 ) (m 0 ) AlAs 0.1 AlSb 0.12 mdos = ...

APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS 541 Direct Energy Gap Compound Eg (eV) AlxIn 1 -xP 1.351 + 2.23x AlxGa 1 -xAs ...

542 APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS Bandgap Mobility at 300 K (eV) (cm^2 /V-s) Semiconductor 300 K 0 K Elec. ...

APPENDIX D. IMPORTANT PROPERTIES OF SEMICONDUCTORS 543 M ate rial B andga p B reak do wn el ec tr i c (eV ) field (V/cm) G aA s ...

Appendix E BEYOND THE DEPLETION APPROXIMATION In the depletion approximation the contribution of mobile charges to the electrost ...

APPENDIX E. BEYOND THE DEPLETION APPROXIMATION 545 -Wp +Wn +qND -qNA -qnn 0 +qpp 0 Figure E.1: Schematic of ap−njunction within ...

546 APPENDIX E. BEYOND THE DEPLETION APPROXIMATION This is called the Gummel correction to the built-in voltage. To apply the de ...

APPENDIX E. BEYOND THE DEPLETION APPROXIMATION 547 For our purposes of understanding the origin of the Gummel correction we will ...

Appendix F DESIGN OF GRADED HETEROJUNCTIONS FOR BIPOLAR TRANSISTORS This appendix discusses the design of graded heterojunctions ...

APPENDIX F. DESIGN OF GRADED HETEROJUNCTIONS 549 Quasi E-field Quasi E-field Effective field Effective field WN 0 xgrade xgrade^ ...

550 APPENDIX F. DESIGN OF GRADED HETEROJUNCTIONS -0.2 -0.1 0.0 0.1 -2 -1 0 1 2 AlGaAs GaAs Energy (eV) Distance from junction (μ ...

APPENDIX F. DESIGN OF GRADED HETEROJUNCTIONS 551 The final potential is found by integrating the piecewise electric field functi ...

Index 2-dimensional gate FET (TEGFET), 375 2DEG, 68, 376, 377, 381, 382 Conductivity, 396 Polar heterostructures, 394 Sheet char ...

INDEX 553 Current flow, 253 Current gain, 264 Design limitations, 265 Emitter, 249 Emitter crowding, 285 Emitter current, 253, 2 ...

554 INDEX DC output conductance, 343 DC transconductance, 338 Ddrif t, 415 Defect, 15, 84, 163 Dislocation, 16 Impurity intersti ...

INDEX 555 BJTfτ, 340 Forward-biased diode, 310 Schottky diode, 318 Excess carrier density, 255 Excess carriers, 157 Excess minor ...

556 INDEX Hole diffusion current, 121 Hole Fermi level, 125 Hole mobility, 106 Holes, 45 Hydrogen atom, 29, 60 Energy levels, 31 ...