Handbook for Sound Engineers

312 Chapter 12 12.1.4 Transconductance Transconductance (gm) is the change in the value of plate current expressed in microamper ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 313 'Ep is the change in signal plate voltage, 'Eg is the change in ...

314 Chapter 12 Output capacitance is measured from the plate to all other elements, except the control grid, which is connected ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 315 control grid and the cathode through the external circuits. Thi ...

316 Chapter 12 where, Ep is the voltage at the plate, Ip is the plate current. 12.1.14 Changing Parameters If a tube is to opera ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 317 F 4 is used to find the power output (12-20) (12-21) In the exa ...

318 Chapter 12 Silicon is a nonmetallic element used in the manu- facture of diode rectifiers and transistors. Its resistivity i ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 319 denote a mobile particle that has a positive charge and that si ...

320 Chapter 12 12.2.2 Diodes The diode is a device that exhibits a low resistance to current flow in one direction and a high re ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 321 In a series arrangement, the most important consideration is th ...

322 Chapter 12 paramount importance. Other parameters of particular importance are low shunt capacitance, low and uniform VF (fo ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 323 The four-layer diode connects (fires) above a specific threshol ...

324 Chapter 12 neously in the same n 1 and p 2 regions. Therefore, at the high injection levels that exist in thyristors, the mo ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 325 false-triggers the SCR and starts its conducting without gate c ...

326 Chapter 12 base material diffused into the wafer and an emitter dot alloyed into the base region. A flat-topped peak or mesa ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 327 tion region causes the material to become practically nonconduc ...

328 Chapter 12 The outstanding characteristics of the IGT are its extremely high input impedance, running to 10^15 :. IGTs have ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 329 (12-28) where, Zo is the output impedance in ohms, Zin is the i ...

330 Chapter 12 emitter-to-base circuit is open. Emitter-cutoff current flows when the emitter to base is reverse biased and the ...

Tubes, Discrete Solid State Devices, and Integrated Circuits 331 signal is small compared to the dc bias current and voltage. Tr ...