556 INDEX
Hole diffusion current, 121
Hole Fermi level, 125
Hole mobility, 106
Holes, 45
Hydrogen atom, 29, 60
Energy levels, 31
IDSS,see Saturation current
Impact ionization, 113, 177
InxGa 1 −xN, 388
Incoherent structures, 18
Indirect bandgap, 47
InGaAs/InAlAs HBTs, 348
Injected charge distribution, 309
Insulator, 43
Insulator-semiconductor junctions, 230
Interconnects, 216
Interdigitated, 285
Interface, 15, 230
Interface roughness, 15
Interface state, 222
Si/SiO 2 interface, 17
Interface roughness scattering, 375
Intrinsic carrier density, 59
Intrinsic gate length, 378
Ionicity, 101
Ionized impurity scattering, 102, 377, 378,
385, 397
Joyce-Dixon approximation, 64, 125
Joyce-Dixon statistics, 237
Junction capacitance, 308
Junction FET (JFET), 356
Junction voltage at saturation, 324
k-space volume per electron, 531
k-vector, 38
Kirk effect, 274
Kirk threshold, 274, 277
Landauer formalism, 500
Laplace equation, 369, 372
Large signal power gain(LSG), 415
Lateral gate resistance, 378
Lattice, 2
Lattice constant of an alloy, 195
Lattice mismatch, 17, 394
Lattice types, 2
Body-centered cubic, 3
Face-centered cubic, 3
Hexagonal close pack (HCP), 3
Simple cubic, 4
Law of mass action, 57, 150
Layer-by-layer growth, 22
LED
Substrates, 194
Lever rule, 384, 397
Light hole band, 47
Load-line,see Power amplifier
Local area networks, 193
Localized defect, 15
Localized states in solids, 84
Longp−ndiode, 141Magnetic semiconductors, 505
Materials properties, 8
Maximum available gain (MAG), 414
Maximum frequency of oscillation, 341, 414
Maxwell’s equations, 129
Mean collision time, 119
Mean free path, 119, 121
MESFET, 356, 362
Boundary conditions, 370
Channel conductivity, 373
Current-voltage characteristics, 362
Cutoff frequency, 414
Depletion width, 365
Equivalent circuit, 413
Ohmic regime, 362
Output conductance, 372
Saturation regime, 367, 368
Small signal response, 411
Transconductance, 367
Mesoscopic structures, conductance fluctu-
ations, 502
Metal, 43, 44, 50
Properties, 54
Miller indices, 7