INDEX 557
Minority carrier injection, 131
Minority carrier lifetime, 307
MMIC technology, 347
Mobile carriers, 50
Mobility, 105
In selected semiconductors, 106, 542
Modulation doped FET (MODFET), 356,
375
Modulation doping, 375
Modulation efficiency, 385, 387
Moll-Ross relationship, 281
Moore’s Law, 434, 436
Narrowp−ndiode, 141
Narrow diode, 160
Negative capacitance, 336
Nitride heterostructures, 69
Nitrides, 388
Non-parabolic approximation, 48
Nonradiative recombination rate, 142
Occupation number, 42
Ohm’s law, 105
Ohmic contact, 229, 413
Ohmic regime, 362
Optical phonon, 100
Optical processes in semiconductors, 128
Optical transitions in indirect materials, 129
Optimum load resistance, 417
Output conductance, 372–374, 378, 413
High aspect ratio, 374, 375
Output impedance, 343
Output resistance, 398
Overshoot effects, 111
p-ndiode, 146
AC response, 304
Admittance, 309
Band diagram, 151
Built-in potential, 150
Current flow, 157, 159
Defect, 163
Depletion region width, 151
Diode equation, 159
Drift and diffusion current, 147
Electric field, 153, 154
Forward bias, 155
Generation-recombination current, 168
High injection, 177
High-voltage effects, 177
Illuminated with light, 184
Junction capacitance, 308
Majority and minority currents, 160
Poisson equation, 152
Potential, 152
Reverse saturation current, 176
Schottky diode, 227
Small signal equivalent circuit, 306
Tunneling, 180
Turn-on voltage, 214
Under bias, 155
Voltage partitioning factor, 168
Parasitic channel, 378, 381
Passivation, 231
Periodic potential, 36
PerturbationV,97
Perturbation theory, 97
Phonon scattering, 377
Rates in GaAs, 103
Phonons, 99, 101
Acoustic, 99
Longitudinal, 99
Modes in GaAs, 100
Optical, 99
Transverse, 99
Photon absorption, 128
Photon flux, 129
Piezoelectric effect, 65, 69
Pinch-off, 357, 358, 362
Voltage, 358, 365
Pinch-off voltage, 385
Poisson effect, 22
Poisson’s equation, 152, 223, 384
Poisson’s ratio, 22
Polar charge at heterointerfaces, 67
Polar optical phonon scattering, 101
Polarization, 388, 389