Scanning Electron Microscopy and X-Ray Microanalysis

(coco) #1

548


Energy dispersive X-ray spectrometry (EDS) xi



  • adequate counts 297–298

  • beam current 330–332

  • beam energy 297, 330

  • coincidence peaks 294–295

  • detection process

    • coincidence peaks 231–233

    • peak broadening 228–231

    • Si absorption edge 233–234

    • Si-escape peak 231

    • Si internal fluorescence peak 233–234



  • detector dead-time 297

  • detector time constant 297

  • electron-excited EDS operation

    • beam current 235–237

    • channel width and number 235

    • EDS time constant 234

    • solid angle 235



  • exciting characteristic X-rays 287–288

  • fluorescence yield 288

  • lower photon energy region 300–301

  • manual peak identification 301–305

  • manual qualitative analysis 296–297

  • minor and trace constituents 301

  • parameters

    • calibration 330

    • solid angle 330

    • spectrum channel energy width
      328–329

    • spectrum energy span 328–329

    • time constant 329–330



  • pathological electron scattering

    • trace analysis artifacts 364–369



  • peaks, identifying 299

  • principles, qualitative EDS analysis 287

  • QC project 246–249

  • QC tools within DTSA-II 246

  • quality assurance issues 286

  • quality measurement environment

    • detector geometry 237–240

    • detector orientation 240–245

    • energy calibration linearity 245

    • optimal working distance 240

    • process time 240



  • Si escape peak 293

  • silicon drift detector (SDD)

    • low X-ray flux 250–251

    • moderate resolution 251

    • output count rate with live-time dose
      249–250

    • resolution and peak position stability 250



  • software tools 298–299

  • trace level measurement 363–364

  • X-ray absorption 288–289

  • X-ray energy database 289–292
    Energy distribution, backscattered
    electrons 29–30
    EPMAs. See Electron probe microanalyzers
    (EPMAs)
    Everhart–Thornley detector 99–100, 128,
    129–130, 213, 215


F


Fiji 204–206
Focused ion beams (FIB), xiii



  • cross-section preparation 530–532

  • focused ion beam systems 527–528

    • imaging with ions 528–529

    • ion–solid interactions 526–527

    • SEM, sample preparation 530

    • 3D techniques and imaging 532–536




G
Geometric factors


  • bulk specimens 396–397

  • electron-excited X-ray microanalysis 398

  • useful indicators of

    • EDS spectrum 404–406

    • raw analytical total 401–404

    • rough bulk samples 406–408
      Graphical user interface (GUI) 90, 204




H
Hard-facing alloy bearing surface 480–482
Helium ion microscope (HIM) xiv
High resolution imaging


  • achieving visibility 178

  • beam footprint 162–164

  • delocalized signals 162–164

  • instrumentation considerations 162

  • pathological specimen and instrumentation
    behavior

    • contamination 179

    • instabilities 179



  • pathological specimen behavior 178–179

  • pixel size 162–164

  • secondary electron contrast 164–165

    • beam range 167

    • bright edge effect 167

    • critical dimension metrology 167–169

    • isolated edges 165–167



  • with secondary electrons 169–171

    • beam energy strategies 171–173

    • low loss BSEs 176–178

    • SE 1 signal 173–176



  • SEM 162
    HIM. See Helium ion microscope (HIM)


I
Image defects


  • charging

    • control charging artifacts 153–155

    • define 148–149

    • in SEM images 149–152



  • contamination 157–158

  • image defocusing (blurring) 113–117

  • Moiré effects 158–159

  • projection distortion (foreshortening)
    111–113

  • radiation damage 155–157
    Image formation

  • calibrating the image 107–109

  • image defects

    • image defocusing (blurring) 113–117

    • projection distortion (foreshortening)
      111–113



  • image dimensions 107

  • ImageJ-Fiji, calibrated structure in 109–110

  • ImageJ-Fiji, routine linear measurements
    with 110

  • magnification 107

    • scale bars 107

    • by scanning action 106–107

    • stereomicroscopy

      • qualitative stereomicroscopy 118–121

      • quantitative stereomicroscopy 121–124

      • surface measurement 117–118
        ImageJ-Fiji



    • calibrated structure in 109–110

    • routine linear measurements with 110
      ImageJ universe 204
      Imaging crystalline materials

    • acquired data 512–513

    • application 518–521

    • cleaning EBSD data 516–517

    • electron channeling contrast

      • electron backscattering diffraction
        (EBSD) 504–512

      • instrument conditions 504

      • specimen preparation 504



    • map components 513–516

    • polycrystalline materials 502–503

    • single crystals 500–502

    • transmission Kikuchi diffraction (TKD)
      517–518
      Incident beam energy 9–10
      Ink-Jet printer deposits 224–226
      International Union of Pure and Applied
      Chemistry (IUPAC) 51
      Ion beam microscopy

    • chemical microanalysis 546

    • generating ion beams 541–542

    • helium ion microscope (HIM)

      • current generation and data
        collection 543–545

      • operating the 545–546

      • patterning with 545

      • signal generation in 542–543



    • patterning with ion 545

    • usefulness 538–541




J
Java Runtime Environment (JRE) 205

K
Kanaya–Okayama range 11–12, 60, 182
k-ratio


  • analytical total 310

  • converting sets of 310

  • define 308–309

  • element by difference 311

  • estimate CZ 310–311

  • matrix corrections 316–317

  • matrix effects, physical origin of 317

  • normalization 310

  • oxygen by assumed stoichiometry 311

  • quantitative electron-excited X-ray
    microanalysis

    • standardless analysis 314–316

    • standards-based k-ratio protocol
      313–314



  • reporting composition

    • atomic fraction 312

    • mass fraction 311–312

    • oxide fractions 312–313

    • stoichiometry 312




Index

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