548
Energy dispersive X-ray spectrometry (EDS) xi
- adequate counts 297–298
- beam current 330–332
- beam energy 297, 330
- coincidence peaks 294–295
- detection process
- coincidence peaks 231–233
- peak broadening 228–231
- Si absorption edge 233–234
- Si-escape peak 231
- Si internal fluorescence peak 233–234
- detector dead-time 297
- detector time constant 297
- electron-excited EDS operation
- beam current 235–237
- channel width and number 235
- EDS time constant 234
- solid angle 235
- exciting characteristic X-rays 287–288
- fluorescence yield 288
- lower photon energy region 300–301
- manual peak identification 301–305
- manual qualitative analysis 296–297
- minor and trace constituents 301
- parameters
- calibration 330
- solid angle 330
- spectrum channel energy width
328–329 - spectrum energy span 328–329
- time constant 329–330
- pathological electron scattering
- trace analysis artifacts 364–369
- peaks, identifying 299
- principles, qualitative EDS analysis 287
- QC project 246–249
- QC tools within DTSA-II 246
- quality assurance issues 286
- quality measurement environment
- detector geometry 237–240
- detector orientation 240–245
- energy calibration linearity 245
- optimal working distance 240
- process time 240
- Si escape peak 293
- silicon drift detector (SDD)
- low X-ray flux 250–251
- moderate resolution 251
- output count rate with live-time dose
249–250 - resolution and peak position stability 250
- software tools 298–299
- trace level measurement 363–364
- X-ray absorption 288–289
- X-ray energy database 289–292
Energy distribution, backscattered
electrons 29–30
EPMAs. See Electron probe microanalyzers
(EPMAs)
Everhart–Thornley detector 99–100, 128,
129–130, 213, 215
F
Fiji 204–206
Focused ion beams (FIB), xiii
- cross-section preparation 530–532
- focused ion beam systems 527–528
- imaging with ions 528–529
- ion–solid interactions 526–527
- SEM, sample preparation 530
- 3D techniques and imaging 532–536
G
Geometric factors
- bulk specimens 396–397
- electron-excited X-ray microanalysis 398
- useful indicators of
- EDS spectrum 404–406
- raw analytical total 401–404
- rough bulk samples 406–408
Graphical user interface (GUI) 90, 204
H
Hard-facing alloy bearing surface 480–482
Helium ion microscope (HIM) xiv
High resolution imaging
- achieving visibility 178
- beam footprint 162–164
- delocalized signals 162–164
- instrumentation considerations 162
- pathological specimen and instrumentation
behavior- contamination 179
- instabilities 179
- pathological specimen behavior 178–179
- pixel size 162–164
- secondary electron contrast 164–165
- beam range 167
- bright edge effect 167
- critical dimension metrology 167–169
- isolated edges 165–167
- with secondary electrons 169–171
- beam energy strategies 171–173
- low loss BSEs 176–178
- SE 1 signal 173–176
- SEM 162
HIM. See Helium ion microscope (HIM)
I
Image defects
- charging
- control charging artifacts 153–155
- define 148–149
- in SEM images 149–152
- contamination 157–158
- image defocusing (blurring) 113–117
- Moiré effects 158–159
- projection distortion (foreshortening)
111–113 - radiation damage 155–157
Image formation - calibrating the image 107–109
- image defects
- image defocusing (blurring) 113–117
- projection distortion (foreshortening)
111–113
- image dimensions 107
- ImageJ-Fiji, calibrated structure in 109–110
- ImageJ-Fiji, routine linear measurements
with 110 - magnification 107
- scale bars 107
- by scanning action 106–107
- stereomicroscopy
- qualitative stereomicroscopy 118–121
- quantitative stereomicroscopy 121–124
- surface measurement 117–118
ImageJ-Fiji
- calibrated structure in 109–110
- routine linear measurements with 110
ImageJ universe 204
Imaging crystalline materials - acquired data 512–513
- application 518–521
- cleaning EBSD data 516–517
- electron channeling contrast
- electron backscattering diffraction
(EBSD) 504–512 - instrument conditions 504
- specimen preparation 504
- electron backscattering diffraction
- map components 513–516
- polycrystalline materials 502–503
- single crystals 500–502
- transmission Kikuchi diffraction (TKD)
517–518
Incident beam energy 9–10
Ink-Jet printer deposits 224–226
International Union of Pure and Applied
Chemistry (IUPAC) 51
Ion beam microscopy - chemical microanalysis 546
- generating ion beams 541–542
- helium ion microscope (HIM)
- current generation and data
collection 543–545 - operating the 545–546
- patterning with 545
- signal generation in 542–543
- current generation and data
- patterning with ion 545
- usefulness 538–541
J
Java Runtime Environment (JRE) 205
K
Kanaya–Okayama range 11–12, 60, 182
k-ratio
- analytical total 310
- converting sets of 310
- define 308–309
- element by difference 311
- estimate CZ 310–311
- matrix corrections 316–317
- matrix effects, physical origin of 317
- normalization 310
- oxygen by assumed stoichiometry 311
- quantitative electron-excited X-ray
microanalysis- standardless analysis 314–316
- standards-based k-ratio protocol
313–314
- reporting composition
- atomic fraction 312
- mass fraction 311–312
- oxide fractions 312–313
- stoichiometry 312
Index